TRANSISTOR T462 Search Results

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

Contextual Info: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

Contextual Info: 4bE ì> HARRIS SEMICOND SECTOR £! m M3QS271 OGBTlôô E • H A S HM-65642/883 H L A J R F R IS S E M I C O N D U C T O R ~T~t4(a "2LS ~ 128K x 8 Asynchronous CMOS Static RAM January 1992 Features • Description This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

REGULATOR S 812

Abstract: S-81250AG S81230AG S-2212R s812 S2212R S-81230AG
Contextual Info: SE IK O INSTRUMENTS U H fil D E I Ö1S3M43 Q D D D IU 2 | T-46-23-08 ’ S NON-VOLATILE MEMORY/NON-VOLATILE RAM f g g g ★Under development APPLICATIONS The non-volatile RAM NV RAM) is a non-volatile CMOS • Constants setting memory combining a static CMOS RAM and a non-volatile

Transistor A131

Abstract: BT124 T68A staking T46-2-9 T46-4-9 transistor t44 T441M TRANSISTOR R52 R53 CA
Contextual Info: 69 Accessories Wire-Wrap Terminals for .042” Holes Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords TM and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking

k3225

Abstract: T68A Transistor A131 018DIAMETER K322M K322 vectorbord T42-1 P149A R53C r50 transistor
Contextual Info: Wire-Wrap Terminals for .042" Holes T44, T68 Bifurcated Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking are also available.

Contextual Info: H A RR IS S E M I C O N D S E C T O R 4bE D • 430E271 D 0 3 H 7 3 G HAS HM-65262/883 HARRIS S E M I C O N D U C T O R “ H G r 2 .3 -C ? e > 16Kx1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is

HY6116-10

Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
Contextual Info: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

Contextual Info: 43G2271 DGBTQÜÖ 7 • H A S HbE » HARRIS SEMICOND SECTOR CDP1822 CDP1822C T "4 ìé='2.'5 ■'OT ¡T I H A R R IS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static

Contextual Info: 13E D I TSOSBID □0G04t.l VITELIC CORP V s\ - Z 3 'O VITELIC ^ V61C67 FAMILY HIGH PERFORMANCE LOW POWER 16K x 1 BIT CMOS STATIC RAM Features Description • High Speed • Maximum access time of 2 5 /3 5 /4 5 /5 5 /7 0 ns The V61C67 is a high speed, low power, 16,384word by 1-bit CMOS static RAM fabricated using

CDM62256-10

Contextual Info: H A RR IS S E M I C O N D S E C T O R 37E D • 4 3 0 5 27 1 D D S a b S l 7 « H A S Random-Access Memories RAMs . T -4 6 -2 3 -1 4 CDM62256 A14- 1 28 — A t2 — 2 A7— Î 27 - W Ï 26 - At 3 AS — 4 A ft — 9 A 4 - 6 A3 — A2 — 7

Contextual Info: HARRIS SENICOND SECTOR Œ\ MtiE ì> HARRIS S E M I C O N D U C T O R CDP1826C m M3GSB71 OOB'iDMO 3 « H A S 2 .3 - 12 ^ CMOS 64-Word x 8-Bit Static RAM February 1992 Features Description • Ideal for Small, Low-Power RAM Memory Requirements In Micropro­

TC55257

Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
Contextual Info: ,_ J TOS H IB A : _ L O G I C / M E M O R Y 4SE D • llg r iHii ^0^7246 D025D11 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM □ ■TOSS* - - iDESCRIPTIONl The TC51832 Family is a 256K bit high-speed CMOS Pseudo-Static RAM organized as 32,768

HY61C16-70

Abstract: HY61C16 61C16 k239
Contextual Info: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

cdm 316

Abstract: CDM6264 CDM6264-3 ca 3161 e IC CDM6264-2 M6264
Contextual Info: HARRIS SEMICOND SECTOR 37E P Random-Access Memories RAM s . H M3G2271 0023b45 1 Bi HAS - T-46-23-12 CDM6264 NC-AI2— AT — A6 — AS-A4-A3 — A2-A1 -AO— 1/01 — 1/02 — 1703-vss— r 2 3 4 5 6 7 8 9 10 II 12 IS 14

Contextual Info: FUJITSU MICROELECTRONICS FU JITSU 23E D 374T7L5 0007042 1 I MOS 262144-BIT DYNAMIC RANDOM ACCESS MEMORY MB 81464-10 MB 81464-12 MB 81464-15 June 1987 Edition 4.0 65,536 x 4 DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 81464 is fu lly decoded, dynam ic random access m em ory

u31c

Abstract: ASG TRANSISTOR
Contextual Info: N E C ELECTRONICS INC 3ÖE 3> b4a?525 d ü b i ^ h 0 * n e c e PPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM N EC E lectronics Inc. Description Pin Configurations The /JPD424102 is a static-oolumn dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to

TfiS SEMICONDUCTOR GROUP

Abstract: MSM514400 MSM514400-10 S4240 24B4G
Contextual Info: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.

CA10

Abstract: MSM514100-10 MSM514100-8A msm514100
Contextual Info: 4bE D O K I M S M s e m i c o • b724SMQ 0 0 0 S S 7 7 2*10 « O K I J n d u c t o r T O K I 5 1 4 1 0 0 - y t - z t ' / SEMICONDUCTOR GROUP 4,19 4 ,3 0 4 -W Q R D x 1-BIT D YN A M IC RA M : FAST PAGE M O D E TYPE G EN ER A L DESCRIPTION The MSM514100 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.

FZJ 131

Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
Contextual Info: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

Contextual Info: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

Contextual Info: VITELIC CORP V 1BE D | ^502310 U o q q ^ VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2K 8 BIT CMOS STATIC RAM 4 | J M io 'Z y~ x Features Description • High Speed • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C16 is a high speed, low power, 2048-word