TRANSISTOR TOSHIBA MARKING HF Search Results
TRANSISTOR TOSHIBA MARKING HF Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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| TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR TOSHIBA MARKING HF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HN3C14FContextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING |
OCR Scan |
HN3C14F HN3C14F | |
HN3C15FContextual Info: HN3C15F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 15F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING 6 5 4 Fl F» FI- Type Name |
OCR Scan |
HN3C15F HN3C15F | |
HN3C13FContextual Info: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C13F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.8 Including Two Devices in SM6 Super Mini Type with 6 Leads - 1 SYMBOL VCBO VCEO Ve b o ic Ib Pc* Tj MARKING |
OCR Scan |
HN3C13F HN3C13F | |
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Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking |
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MT3S113P SC-62 | |
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Contextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: |S21e| = 10.5dB (typ.) (@f=1GHz) 2 Marking |
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MT3S22P SC-62 | |
MT3S113
Abstract: transistor 2F to-236 4360A
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MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A | |
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Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking |
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MT3S113 O-236 SC-59 | |
mt3s113pContextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking |
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MT3S113P SC-62 mt3s113p | |
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Contextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking PW-Mini |
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MT3S22P SC-62 | |
MT4S100TContextual Info: MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking |
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MT4S100T MT4S100T | |
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Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U |
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MT3S20P SC-62 | |
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Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini |
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MT3S20P SC-62 | |
MT3S46TContextual Info: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM |
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MT3S46T MT3S46T | |
MT4S101TContextual Info: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking |
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MT4S101T MT4S101T | |
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Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking |
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MT3S111 O-236 SC-59 | |
MT3S19Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1. |
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MT3S19 O-236 SC-59 MT3S19 | |
mt3s111Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking |
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MT3S111 O-236 SC-59 mt3s111 | |
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Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12.5 dB (typ.) (@ f=1 GHz) 2 Marking 3 T 1. |
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MT3S19 O-236 SC-59 | |
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Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1. |
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MT3S19 O-236 SC-59 | |
MT3S20PContextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini |
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MT3S20P SC-62 MT3S20P | |
MT3S22PContextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini |
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MT3S22P SC-62 MT3S22P | |
MT3S150P
Abstract: TOSHIBA MICROWAVE AMPLIFIER
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MT3S150P MT3S150P TOSHIBA MICROWAVE AMPLIFIER | |
MT3S113TUContextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz) |
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MT3S113TU MT3S113TU | |
MT4S102UContextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 P 3 4 0.15±0.05 0~0.1 1 0.7 2 +0.05 0.95 –0.15 Marking 0.2+0.1 –0.05 2.0±0.2 2 3 High Gain:|S21e| =15.0dB @f=2GHz |
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MT4S102U MT4S102U | |