TRANSISTOR VCEO 60V, IC 3A Search Results

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

2sa1952

Contextual Info: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)

Contextual Info: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

driver transistor hfe 60

Abstract: 2SA1741 high gain low voltage PNP transistor 50V 1A PNP power transistor
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1741 Silicon PNP Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

NPN Transistor 8A

Abstract: TIP100 TIP105
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A

lf817

Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V

2SC4596

Abstract: transistor 2sc4596 2SC4596 equivalent 2SA1757 1MH60
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757

60V transistor npn 2a

Abstract: 2SC4549
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4549 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= 2V , IC= 1A) ·Low Saturation Voltage: VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A)

2SA1441

Abstract: 2SA1441 datasheet transistor Vceo 60v, Ic 3A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1441 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

driver transistor hfe 60

Abstract: 2SA1741 high gain low voltage PNP transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1741 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

2SA1744

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)

transistor 2SA1444

Abstract: 2SA1444 2SA144
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1444 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)

2SC3691

Abstract: transistor 2SC3691 60V transistor npn 2a npn switching transistor 60v 60V transistor npn 3a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·High Switching Speed APPLICATIONS

Contextual Info: High speed switching transistor 60V, 5A 2SC5103 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation Junction temperature Storage temperature PC Tj Tstg Limits

2SA1952

Abstract: 2SC5103 High speed switching Transistor
Contextual Info: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation

2SC5103

Abstract: 2SA1952
Contextual Info: High speed switching transistor 60V, 5A 2SC5103 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation Junction temperature Storage temperature PC Tj Tstg Limits

2SC5103

Abstract: 2SA1952 2SA19
Contextual Info: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation

2SA1440

Abstract: 2SA144 SWITCHING TRANSISTOR 60V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -0.5A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -2A, IB= -0.1A)

Contextual Info: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

FZT751

Abstract: FZT751TA FZT651 FZT marking code MARKING fzt751 MARKING fzt 751 MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated FZT751 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • • • • Mechanical Data • • • • • VCEO = 60V Continuous current IC cont = 3A Low Saturation Voltage Complementary Type – FZT651

2SB1639

Abstract: 2sb163 2SD2318 ic 3 51 2A
Contextual Info: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation

2SD880Y

Abstract: VCEO-60V 2SD880-Y 2SD880
Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage

Contextual Info: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation