TRANSISTOR WY Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

KB817-M

Abstract: E225308
Contextual Info: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

dumper

Abstract: 2SB1318 diode dumper bu500
Contextual Info: NEC D ES C R IP TIO N PNP SICICON TRANSISTOR 2SB1318 The 2SB1318 is a darlington transistor built-in dumper diode at E-C. PACKAG E D IM E N S IO N S in millimeters inches It is suitable for use to operate from IC w ithout predriver, such as hammer driver.

MJE370

Abstract: MJE520 MOTOROLA
Contextual Info: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti­

BCR139

Abstract: BCR139F BCR139L3 BCR139T SC75
Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23

marking 2x

Abstract: BCR108T BCR139 BCR139F BCR139L3 BCR139T E6327 SC75
Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -

Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -

Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23

BCR139

Contextual Info: BCR139 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION PINNING-SOT186 PIN SYMBOL 0 O > N-channel enhancement mode logic level fieid-effect power

Contextual Info: BCR 139 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 139 WYs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

transistor marking WY

Abstract: 2SC2859 WY transistor sot23 WY .wy transistor marking wo sot-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SC2859 Pb Lead-free z Power dissipation：PC=150mW. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2859

WY transistor

Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.

WY transistor

Abstract: sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23

Contextual Info: PHOTOCOUPLER Part Number: KB816 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms . 2.High Collector-emitter voltage (Vceo=70V).

Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ps2562L-1-2 4 MULTI OPTOCOUPLER SERIES FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP • HIGH SPEED SWITCHING tr, tf = 100 is TYP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION ISOLATION VOLTAGE HIGH VOLTAGE SINGLE TRANSISTOR SINGLE TRANSISTORTYPE TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms