TRANSISTORS TN2905 Search Results

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: TO-237 PLASTIC PACKAGE TRANSISTORS PNP J • Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. CSA10130 1 Po 'c (A) 'cm (A) 'ceo (MA) Max ^cs (V) hFE @ <c* (mA) ^CE ^CEISAT] @ ^BE(SAT) «0«) (ns) Max CDIL Case Style

2N2369 SOT-23

Abstract: pn4122 2N708 NPN switching transistor 2N4403 2N3467 2N3905 2N3906 2N4402 2N4403 MMBT3906
Contextual Info: böE ]> • bsoii3 ü 003*1530 aob High Speed Saturateci Switching Transistors continueai ' l*re@lc PMP /IV VC£(sat @(C & mA (MHz) Min Package mA 15 300 T0-237(91) 850 m ft Min mA (Volts) Max 285 150 100 150 0.3 150 !" NPN (ns) Max W (Volts) Min rrM T/-AU R

1501A50

Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
Contextual Info: bôE ]> • b S ü ll3 G High Speed Saturated Switching Transistors continueai 3 Devices VGEO(SKt (Volts) Min 40 NPN PNP 15 hpE @ lc VC£(*at) (C 4 *» W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min /n p D(Amfc) Package (mW) @ 25°C

CTN640

Abstract: CSA1013R CSA1013Y CSA931 CSA931R CSA931Y CTN369 CTN491 CTN492 CTN493
Contextual Info: TO-237 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atin gs Type Electrical Characteristics (Ta=25°C, U n le ss Otherw ise Specified) @ ^CBO ^CEO ^EBO P0 (V) Min (V) Min (V) Min (W) @ Tc-25°c CSA10130 160 160 6 0.9 1 1 150 100 200 200 5 1.5 500 35 15 CSA1013R

2n6718

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD A (W) MAX BVCBO (V) MIN BVCEO *BVCES (V) MIN hFE @ IC VCE(SAT) @ IC MIN MAX fT (A) (V) MAX (A) (MHz) MIN 250 1,000 0.5 1,000 50 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 NPN PNP 2N6714 2N6726 2.0 2.0 40

Contextual Info: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

CENW64

Abstract: 2n6722
Contextual Info: Power Transistors TO-237 Case O z TYPE ic PD BVCBO ic hFE BVCEO V CE SAT ® IC ft *BVggg (A) (W) MAX (V) (V) (mA) (V) (mA) MAX (MHz) NPN PNP MIN MIN MIN MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 MIN 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

Contextual Info: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60

2n6722

Contextual Info: Power Transistors TO-237 Case TYPE NO. iC PD BVCBO BVCEO @ ic hFE VCE SAT @ IC n *b v c e s (A) (W) (mA) (mA) (MHz) (V) (V) MIN MIN MIN MAX 2.0 40 30 50 250 1,000 0.5 1,000 50 2.0 2.0 50 40 50 250 1,000 0.5 1,000 50 2N6728 2.0 2.0 60 60 50 250 250 0.35 250

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

Contextual Info: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE

TN2907A

Contextual Info: TN2905A TN2905A TN2907A C B TO-226 E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

TN2905A

Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
Contextual Info: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

T0236

Abstract: to236 2N2222A
Contextual Info: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 *01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA *T (MHz) mA Min P D(Amb| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

BC337/BC327

Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
Contextual Info: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300