TRW MICROWAVE Search Results

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
Contextual Info: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

TRW2001

Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005
Contextual Info: M OTORCLA SC XSTRS/R F 12E D | t>Bt75Sll Ü0ÖÖ372 0 | T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

TRW63601

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b725M 0000451 T -'b 'b -V l T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed

TPV 3100

Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the

TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Contextual Info: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must

Contextual Info: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary 140-00036-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD15XX – High Speed, Low Power ADC Evaluation Kit

MAF C22

Contextual Info: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary 140-00039-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD110X – High Speed, Low Power ADC Evaluation Kit

TRW52602

Abstract: TRW 52602 TRW52102 52602 A 3121 IC trw rf transistors 1147 x motorola
Contextual Info: MOTOROL A SC XSTRS/R F 1EE D | b3b?aS4 GÜfl f lBTS 1 | T~ 3 V MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T RW 52102 Se rie s The RF Line Microwave Linear Power Transistors . designed primarily for wideband, large-signal output and driver amplifier stages in

milstar

Abstract: Sage Laboratories Phase Shifters Raytheon Company GPS TPS-159 Harris microwave antenna MSR-21 rockwell gps Rotary Joints agena EF-111A
Contextual Info: Sage Laboratories.the “Reliability First” company Since 1955, we have devoted our resources to providing cus­ tomers with a broad spectrum of quality RF and microwave components from DC to 60 GHz. Recognized throughout the industry for quality and reliability, state of the art engineering,

2N5596

Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
Contextual Info: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.

GP131

Abstract: 13F-1 MRW2015
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to

TRW Microwave Detector

Abstract: TRW MICROWAVE
Contextual Info: APH239C K-Band Power HEMT Amplifier GaAs Telecom Products Features • RF frequency: 37 to 43 GHz • Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 16 dB • Built-in power detector Self-biased first stage • Unconditionally stable

QUALCOMM MSM

Abstract: TA0003 10MHz 10dBm oscillator gilbert
Contextual Info: TA0003
 TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major

encoder switch

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MV1449 PRELIMINARY INFORMATION DS3164 2.2 MV1449 PCM HDB3 ENCODER/DECODER The MV1449, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will

HEMT Amplifier

Abstract: TRW MICROWAVE HEMT
Contextual Info: APH238C K-Band Power HEMT Amplifier _ GaAs Telecom Products Features • RF frequency: 23 to 32 GHz Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 14 dB • Unconditionally stable • Compact size

TA0003

Abstract: interleaver QUALCOMM MSM 2
Contextual Info: TA0003
 TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major

8542A

Abstract: MIL-SID-810
Contextual Info: M/A-COM’s Control Components Division has been a leading manufacturer of microwave components for nearly three decades. Our commitment to quality is evident in every product and service we provide. Our engineering staff enjoys worldwide recognition as leaders in

TRW mmic

Abstract: SA043 Ceramic Resonator GHz OXB104C 9701455-S-J1 9G012
Contextual Info: OXB104C HBTVCO G aAs Telecom Products Features • RF tuning range; 17 to 20 GHz • Output power: 6 dBm • Self bias: 5V/102 mA • Phase noise: 109 dBc/Hz at 1 MHz offset Description and Applications 3601240.053.SA043 The OXB104C is a monolithic, HBT voltage-controlled oscillator designed for commercial digital

Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MV1449 PRELIMINARY INFORMATION