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    TSOP 48 PIN FLASH GBIT Search Results

    TSOP 48 PIN FLASH GBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    TSOP 48 PIN FLASH GBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM29LV640T

    Abstract: AM29LV640T datasheet TSOP 48 pin flash gbit 120r uAM29LV640T 101R 110R kb 2736 MirrorBit KB-162
    Text: MirrorBit Quick Reference Guide -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29LV033C Am29LV160M Am29LV017M Am29LV116M Am29LV320MT/B Am29LV320MH/L Am29LV033M Am29LV640T/B Am29LV320D1 Am29LV640D AM29LV640T AM29LV640T datasheet TSOP 48 pin flash gbit 120r uAM29LV640T 101R 110R kb 2736 MirrorBit KB-162

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00

    toshiba nand tc58

    Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
    Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63

    toshiba nand tc58

    Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
    Text: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L

    JS28F512P33BF

    Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-ing JS28F512P33BF JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF

    PC28F00AP30TF

    Abstract: PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30
    Text: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 110ns 16-word 52MHz 512-word 46MByte/s 512Mbit, PC28F00AP30TF PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30

    PC28F512P30

    Abstract: pc28f00ap30 JS28F512P30 PC28F00AP30TF P30-65nm
    Text: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 110ns 16-word 52MHz 512-word 46MByte/s 32-KByte PC28F512P30 pc28f00ap30 JS28F512P30 PC28F00AP30TF

    PC28F00AP33BF

    Abstract: L 1123 1FF4000
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 32-KByte P33-65nm PC28F00AP33BF L 1123 1FF4000

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		PDF P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512

    TSOP 48 pin flash gbit

    Abstract: JS28F00AP33BF 1FFC000
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		PDF P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s TSOP 48 pin flash gbit JS28F00AP33BF 1FFC000

    strataflash 512 p30

    Abstract: JS28F128P30B85 pc28f128p30b JS28f256P30 1GB EASY BGA NOR FLASH JS28F256P30B95 TSOP 48 stacked die package JS28F256P PC28F PF48F4400
    Text: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits


    Original     		PDF 128-KByte 64-Mbit 128-Mbit RD48F3000P0ZBQ0 RD48F3000P0ZTQ0 PF48F3000P0ZBQ0 PF48F3000P0ZTQ0 256-Mbit RD48F4000P0ZBQ0 RD48F4000P0ZTQ0 strataflash 512 p30 JS28F128P30B85 pc28f128p30b JS28f256P30 1GB EASY BGA NOR FLASH JS28F256P30B95 TSOP 48 stacked die package JS28F256P PC28F PF48F4400

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ Embedded Memory P3065nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode


    Original     		PDF P3065nm) 512-Mbit, 100ns 110ns 16-word 52MHz 512-word 46MByte/s 128-KByte

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-KByte

    GL512S

    Abstract: S29GL01GS S29GL128S GL128S S29GL512S S29GL256S GL256S S29GL-S JEP106T JESD68-01
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet (Preliminary)


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S GL512S GL128S GL256S S29GL-S JEP106T JESD68-01

    S29GL128S

    Abstract: GL256S 256us S29GL256S GL512S SPANSION gl512s FLASH S29GL-S S29GL01GS S29GL-128S JESD68-01
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O™


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S GL256S 256us GL512S SPANSION gl512s FLASH S29GL-S S29GL-128S JESD68-01

    PC28F00AP

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode


    Original     		PDF P33-65nm) 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 128-KByte P33-65nm PC28F00AP

    RC48F4400P0VB00

    Abstract: RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85
    Text: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features • High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits


    Original     		PDF 4x32KB 3x128KB 64-Mbit 128-Mbit 256-Mbit 512-Mbit RD48F2000P0ZBQ0 RD48F3000P0ZBQ0 RD48F4000P0ZBQ0 RD48F4400P0VBQ0 RC48F4400P0VB00 RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85

    S29GL128S

    Abstract: No abstract text available
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O™


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S

    JS29F08G08

    Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
    Text: Intel SS72 NAND Flash Memory JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 Product Features Organization: Basic NAND flash command set: Read performance: New commands: — — — Page size: x8: 2,112 bytes 2,048 + 64 bytes ; x16: 1,056 words (1,024 + 32 words)


    Original     		PDF JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 1000pc JS29F04G08BANB3 29F04G08BANB3 JS29F08G08 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand

    Playstation2 power supply

    Abstract: Sandisk TSOP PC133-compliant ALI chipset MCP market MCP Technology Trend NEC stacked MCP 1999 VC100 VC133 NEC MCP SRAM FLASH
    Text: NEXT STEP TRENDS IN NEXT GENERATION MEMORY Misao Higuchi manufacturers to shift to high value added products such as those with proposed new functions in an effort to make up the profit shortfall created when the DRAM market bottomed out. SRAM, on the other hand, is


    Original     		PDF

    GL512S

    Abstract: No abstract text available
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S GL512S