TSOP28 MEMORY Search Results

HM2V8100TTI5SE

Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
Contextual Info: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns

M5M5256DFP-70LL*bm

Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
Contextual Info: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns

M27C512 SGS-THOMSON

Abstract: E5 marking M27C256B M27C512 M27V512 M27C512 marking QR101
Contextual Info: QUALIFICATION REPORT 256K & 512K bit CMOS-E5 OTP ROM in TSOP28 INTRODUCTION The concerned products to this Qualification Report are: M27C256B-XXNY, M27C512-XXNY, M27V512-XXNY where "XX" is for access time class and "Y" for temperature range. The M27C256B is a 256K bit OTP ROM, organized as 32K x 8 bits. The M27C512 and the

PDIP28

Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

plcc32

Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA

J-STD-020B

Abstract: M68AF031A PDIP28
Contextual Info: M68AF031A 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AW031A

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

M68AF031A

Contextual Info: M68AF031A 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

Fairchild part numbering

Abstract: m27c512 equivalent package TSOP20 M27C512 tsop20 401 PDIP40 AM27X64 TSOP44 MX27C1100 AT27LV520
Contextual Info: OTP and UV EPROM products STMicroelectronics - January 2004 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.

TSOP-20

Abstract: package TSOP20 tsop20 M27C4001 8X14 PDIP32 MX27C512 ST M27C256B TSOP32 M27C512
Contextual Info: OTP and UV EPROM products Cross-reference guide January 2006 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

TSOP48 outline

Abstract: AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape
Contextual Info: PD0003 Packing information Thin Small Outline packages for memory products Tape and Reel shipping media Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

M68AW031A

Abstract: H28A
Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

M68AW031A

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O