TSSOP 54 PACKAGE Search Results

HYM72V64C756K8M

Abstract: HYM72V64C756K8M-8 HYM72V64C756K8M-S RA12
Contextual Info: 64Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64C756K8M Series DESCRIPTION The HYM72V64C756K8M H-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin TSSOP Register Buffers, one 24-pin TSSOP PLL and

76468

Abstract: LTC1992 R465 23939 0536
Contextual Info: RELIABILITY DATA LTC1992 LTC2053/54/55 LTC6241/42/44 LTC6800/6910/11/15 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SOIC/SOT/MSOP SSOP/TSSOP 462 0236 154 0421 616 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE TYPE SAMPLE

Contextual Info: Preliminary Rev. 0.0 ,„ c . „ LG Semicon Co.,Ltd. Description The GMM2735233CTG is a 4M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 5 pieces o f 4M x 16bits Synchronous DRAMs in 54 pin TSOP I! package and one 2048 bit EEPROM in 8pin TSSOP

ITT2205AF

Contextual Info: 3.6V 0.5W RF Power Amplifier 1C for DECT ITT2205AF Features Applications DECT Single Positive Supply 54% Power Added Efficiency 100% Duty Cycle 1.2:1 Input VSW R in both On and Off states 1800 to 2000 MHz Operation 16 Pin TSSOP Plastic Package Accommodates Battery Charging Conditions up to 5.5 Volts

ITT2205AF

Abstract: C11AH101K5TXL
Contextual Info: 3.6V 0.5W RF Power Amplifier 1C for DECT ITT2205AF Applications Features Single Positive Supply 54% Power Added Efficiency 100% Duty Cycle 1.2:1 Input VSW R in both On and Off states 1800 to 2000 MHz Operation 16 Pin TSSOP Plastic Package Accommodates Battery Charging Conditions up to 5.5 Volts

Contextual Info: GMM26416233ENTG 16,777,216 WORDS x64bit LG Semicon Co.,Ltd. Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

Contextual Info: GMM27316233ENTG 16,777,216 WORDS x72BIT LG Semicon Co.,Ltd. Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

Contextual Info: GMM27316233CNTG LG Semicon Co.,Ltd. Description The G M M 27316233CNTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP 11 package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

GMM2739233CTG

Contextual Info: ,^ e . ^ ^ LG Semicon Co.,Ltd. Description The GM M 2739233CTG is a 8M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 9 pieces o f 8M x Kbits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package m ounted on a 168 pin

8pin cobc

Abstract: S52K
Contextual Info: HYM72V32M656AT6 32Mx64, 16Mx16 based, P C I00 DESCRIPTION The HYM72V32M656AT6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy

Contextual Info: Ù2 GMM2645228CNTG LG S a m ic o n C o .,L td , Description The GMM2645228CNTG is a 4M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 4 pieces of 4M x 16bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8 pin TSSOP package mounted on a 144 pin

Contextual Info: ^ J GMM27333230ATG L G S e m ic o n C o .,L td . Description The GMM27333230ATG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 32M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2 pieces of 16 bits Register in 48 pin TSSOP,

Contextual Info: FW Package 56-Lead Plastic TSSOP 6.1mm (Reference LTC DWG # 05-08-1652 Rev 0) 56 29 0.95 ±0.10 13.90 – 14.10* (.548 – .556) 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 8.4 ±0.10 6.2 ±0.10 7.9 – 8.3 (.311 – .327)

Contextual Info: 16Mx64 bit SDRAM SO DIMM H-Series based on 16Mx8 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M1601 PRELIMINARY Rev 0.3 The HYM71V64M1601 H-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig

Contextual Info: 16Mx64 bit SDRAM SO DIMM H-Series based on 16Mx8 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M1601 PRELIMINARY DESCRIPTION The HYM71V64M1601 H-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig

HYM7V641601

Abstract: HYM7V641630
Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K

HYM7V641601

Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K

HY57V1291620

Contextual Info: 8Mx64 bit SDRAM SO DIMM X-Series based on 8Mx16 SDRAM, LVTTL, 4-Banks & 4K-Refresh HYM71V64M801 PRELIMINARY DESCRIPTION The HYM71V64M801 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 8Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag

HYM72V64656T8

Abstract: HYM72V64656T8-8 HYM72V64656T8-S RA12
Contextual Info: 64Mx64bits PC100 SDRAM Unbuffered DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64656T8 Series DESCRIPTION The HYM72V64656T8 H-series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy printed

hyundai dimm 128mb pc100 32mx64

Abstract: RA12 FEB01
Contextual Info: 32Mx64 bits PC100 SDRAM SODIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656T6 Series DESCRIPTION The HYM72V32M656T6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy

Contextual Info: 32Mx64 bit SDRAM Unbuffered DIMM H-Series PC/133 SDRAM Specification Supporting based on 16Mx8 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V633201 PRELIMINARY DESCRIPTION The HYM71V633201 H-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of sixteen 16Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 168-pin

hym71v753201

Contextual Info: 32Mx72 bit SDRAM Unbuffered DIMM H-Series PC/133 SDRAM Specification Supporting based on 16Mx8 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V753201 PRELIMINARY DESCRIPTION The HYM71V733201 H-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eighteen 16Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 168-pin

Contextual Info: 8Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A800/ HYM7V72A801/ HYM7V72A830/ HYM7V72A831 DESCRIPTION The HYM7V72A800/ 72A801/ 72A830/ 72A831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

Contextual Info: 32Mx64 bits PC100 SDRAM SODIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656 L T6 Series DESCRIPTION The HYM72V32M656T6 Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy