TT 46 N 1600 Search Results

dt46n

Contextual Info: EUPEC blE 34032^7 DQQIGSfi 233 « U P E C T> TT 46 N, TD 46 N, DT46 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

2sk405 2sj115

Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Contextual Info: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS

thyristor TT 46 N 1200

Abstract: thyristor TT 46 N thyristor TT 36 N TT 46 N 1600 TT 46 N 800 TT 80 N 1200 TT 95 N 1200 thyristor TT 36 DT18N td18n
Contextual Info: - 'i ase con'ro’ thyristor modules "ype It r m s m V d iim It s m / i 2d t hAVM^C V TO rT ( d i/ d t ) cr t„ = DIN Wj max IEC 747-6 (dv/dt)cr RthJC RthCK tv, max Outline V rhm V d jm = V crm V r ev i = V r r m + 100 V V A 10 ms, 10 ms. w 180 ”el sin.

EUPEC tt 105 N 16

Abstract: EUPEC tt 66 N 16 EUPEC TT 56 n 16 EUPEC TT 66 EUPEC TT 46 n 16 EUPEC TT 25 N EUPEC Thyristor TT 56 N PHASE CONTROL THYRISTOR MODULE TT 56 N of EUPEC tt 105 N 16 TT105N
Contextual Info: Phase control thyristor modules Vdrm •t r m s m It s m eupec m te / i 2dt I tavm ^ c D V TO • 3 4 D 3 5 117 0D0Q114 (dv/dt)cr (di/dt)cr It tts RthJC ■ upec RthCK tv j m ax V rrm V A 10 ms, 10 ms, tv) max tvj max 180°el sin. A A2s A/°C tv , = tv j

thyristor TT 45 N 1200

Abstract: TT 56 N 1200 PHASE CONTROL THYRISTOR MODULE TT 56 N thyristor TT 46 N thyristor TT 46 N 1200 tt 46 n 1200 thyristor TT 36 N thyristor TT 18 N 1400 EUPEC TT 66 thyristor 45 n 1200
Contextual Info: Phase control thyristor modules EUPEC Type V drm •t r m s m It s m aMDBtîT? D D O D l l t MTE D / ¡ 2d t W m^C TTS • It d i/d t cr (d v/dt)cr Rthjc tv ,= tvj = tv j m ax tv] max typ. DIN IEC 747-6 DIN IEC 747-6 180 °el sin. V mQ A/pis V /ns K /W V(TO>

thyristor TT 46 N 1200

Abstract: thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 TD25N TT 93 N 08 thyristor TT 46 N 12 TT 46 N 12 thyristor TD 25 N PHASE CONTROL THYRISTOR MODULE TT 56 N
Contextual Info: Phase control thyristor modules Type Itrmsm V oR M I tsm i2dt / IfA V M ^C V TO (di/dt)ci tq (dv/dt)CF typ D IN 180 °el IEC 747-6 sin. V /( iS °c/w “C/W °c RlhJC R|hCK tv) max V rrm Vdsm = Vdrm V rsm = V r r M f100 V V Baseplate = A 10 ms, 10 ms, 180 °el

thyristor TT 46 N

Abstract: TT 105 N 12 thyristor tt 162 n 12 thyristor TT 46 N 12 TT 46 N 800 thyristor TT 430 N 22 tt 104 n 12 thyristor tt 18 f 1000 thyristor TT 36 N thyristor tt 500 n 16
Contextual Info: Phase Control Thyristor Modules T ype V drm V rrm V Itrmsm A V dsm = V drm V rsm = V rrm+100V Itsm A 1 0 ms, Jpdt A zs 1 0 ms, ^vj max tyj max X103 350 0,61 ItAVM^c A /°C 180° el sin V TO V rT (d i/d t)cr tq (d v /d t)cr m fì MS typ. V/|JS DIN IEC 747-6

thyristor TT 46 N

Abstract: thyristor tt 66 n 16 thyristor tt 121 thyristor TT 95 N 1200 thyristor TT 36 N thyristor tt 500 n 16 TT105N TT 56 N 1200 thyristor tt 56 n 14 TT 93 N 08
Contextual Info: Phase Control Thyristor Modules T ype V V V dsm V It r m drm V rrm = V rsm sm It s m Jpdt llA V M /tc V T O fT (di/dt) cr tq A A 2S A /° C V m ß A /|J S MS V /|js DIN IEC 747-6 A 10 drm m s, ^vj max = V rrm+100V 10 m s, ^vj max 180° el s in tvi = Vi =

Contextual Info: MITEL DF252 Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4142 - 3.3 DS4142 - 3.4 KEY PARAMETERS V RRM 1600V 360A Jf AV 3000A FSM 35|iC Q, 3.2|is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

im8x

Contextual Info: SEE EUPEC » • 340352=17 0 0 0 0 5 1 1 T 468 S T 470 S 'P Typenreihe/Type range 1400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 1400.2000 V 1400.2000 V V drm Vrrm 1600 1800 Itrmsm Itavm tc = 85°C

TT 46 N 12

Abstract: tt 25 n powerblock EUPEC TT 105 N 12 TT56N EUPEC tt 18 n 14 TT46N EUPEC DD 105 N 16 L tt 36 n powerblock TT93N EUPEC tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronic Company Marketing Information DD 31 N screwing depth max. 8,5 fillister head screw M5 x 11 Z4 - 1 marking 68 15,5 20 20 80 92 AK K A VWK February 1996 DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

B2HKF

Abstract: thyristor TT 430 N 22 TT 46 N 800 TT 56 N thyristor tt 250 n 16 thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 121 thyristor TT 430 thyristor tt 500 n 16
Contextual Info: ISOPACK Modules Type ISOPACK Module VDRM, VRRM IFRMSM V A VDSM = VDRM VRSM = VRRM + 100 V IFSM ∫ i²dt Id/tC A A²s A/°C V TO 10 ms, tvj 10 ms, tvj max max rT RthJC RthCK tvj max °C V mΩ °C/W °C/W tvj = tvj max tvj = tvj max per arm per arm Single phase diode bridges

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

Contextual Info: E U PE C 5SE 1> 34032^7 OOOOSbb T2 7 • U P E C A 930 S 2000 Typenreihe/Type range 1600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm Vrrm tp = 1 iS Vrrm(C Maximum permissible values V 1600.2000 V 20 V 50 Itrmsm Itavm Itsm

powerblock tt 45

Abstract: powerblock TT 95 N 1200 thyristor tt 18 n 800 tt 92 TP-7F tt 251 n powerblock powerblock TD 170 N thyristor TT 430 N DT46F thyristor tt 162 n 12
Contextual Info: Phase Control Thyristor Modules Type V drm ' trmsm Itsm Ji2d t V rrm V A A A 2s 10 ms, 10ms, Vdsm = V DRM Vrsm = Tyj max T vj max V rrm+ 1 oov •103 ItAVM^T c V TO rT A /°C V m fì (d i/d t )cr A /p s MS 180° el Tvj —Tvj max Tvj “ Tyj m aX DIN typ.

38n30

Abstract: P733 epcos t250 p732 K1020 N41 250 B62152 L743 B64290 P709
Contextual Info: Пассивные компоненты ФЕРРИТЫ И АКСЕССУАРЫ Фирма "Epcos" разрабатывает и производит магнитомягкие оксидно керамические ферриты на основе MnZn и NiZn под названием SIFERRIT. Превосходные свойства этих ферритов позволяют

Contextual Info: FEATURE: INSULATOR: U L 9 4 V -0 Glass fiber Reinforced Polyester Contact Bronze SPEC IFICATION: Current, Rating: 3 Amp 1600 VAC Contact Resistance: Less than 10 milliohms 88 88 88 88 88 88 88 B ~ i Insulation Resistance: Over 100GC1 500VDC / mnmninnnp1

Contextual Info: DF452 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4213 - 3.1 DS4213 - 3.2 KEY PARAMETERS V RRM 1600V 540A Jf AV 5000A FSM 35|iC Q, 3.2|is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

YF105

Contextual Info: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM V RRM I 1200-1600 V 70 A dAVM Type V VUB 6 0 -1 2 N01 VUB 6 0 -1 6 NOI 1200 1600 Symbol Test Conditions Maximum Ratings 1200/1600 59 70 V A A T, 45°C, t : 10 ms, VR= 0 V

GP-045

Abstract: D2069
Contextual Info: ULN2064/65B 1.5 A DABUNGTON SWITCHES High-voltage, high-current Darlington arrays ULN2064B/LB through ULN2069B/LB are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and

i031

Abstract: TC-6096 CE1F3P T108 T460 Scans-008809 transistor 115 25e S082
Contextual Info: NEC À iïf /ü t z C o m p o u n d T ran sis to r A CE1F3P f â i i r t S c N p n 1 1 ' ^ 4 1- > 7 v u M~> ' a > + jS J C E l F S P l i f S i i ï X - i è L t n w ? ^ - x ; 7 ? P.l C 7 > ÿjr — K , 3 i / ^ H ig h • ^ — xPhIi-i/eISH : 9 4 h F E Î Ê Î Æ l^ jl h

W300514

Abstract: PC273UD13C11CTF F300523 PROTISTOR FERRAZ 1000V H300525 B300496 S300511 PC73UD13C630TF E301994 V300513
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC Main characteristics Recognized 650 to 1300VAC / 63 to 2800A. • • • • • • • • Exceptionally low I2T, Watt losses. Non-magnetic construction, highly reliable low voltage.

Contextual Info: DF252 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4142 - 3.3 DS4142 - 3.4 March 1998 KEY PARAMETERS V RRM 1600V 360A Jf AV 3000A FSM 35|lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

EUPEC TT 60 f

Contextual Info: D60N 7 ~ 0 1 -3 .1 D60NR EUPEC 52E D • anaBsi? oaaoöflfi 33o ■ upec Typen reihe/Type range_ D 60 N /D 60 N R _ 400 _ 800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte