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    2SK372 Price and Stock

    Rochester Electronics LLC 2SK3720-6-TB-E

    NCH 30MA 15V MOSFET
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    DigiKey 2SK3720-6-TB-E Bulk 3,000
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    Rochester Electronics LLC 2SK3720-5-TB-E

    RF MOSFET 10V 3CP
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    DigiKey 2SK3720-5-TB-E Bulk 1,480
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    SANYO Semiconductor Co Ltd 2SK3720-5-TB-E

    2SK3720-5-TB-E
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    Verical 2SK3720-5-TB-E 12,721 1,810
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    Rochester Electronics 2SK3720-5-TB-E 12,721 1
    • 1 $0.195
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    Others 2SK3721

    3721
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    Quest Components 2SK3721 16
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    onsemi 2SK3720-6-TB-E

    NCH 30MA 15V MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3720-6-TB-E 3,000 1
    • 1 $0.0975
    • 10 $0.0975
    • 100 $0.0917
    • 1000 $0.0829
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    Find more 2SK372 price and stock on Findchips.com

    2SK372 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK372 Toshiba TRANS JFET N-CH 30A 3(2-4E1C) Original PDF
    2SK372 Toshiba N-Channel MOSFET Original PDF
    2SK372 Unknown FET Data Book Scan PDF
    2SK372 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK372 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK372 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3720 Sanyo Semiconductor FM Tuner, VHF-Band Amplifier Applications Original PDF
    2SK3720-5-TB-E SANYO Electric RF FETs, Discrete Semiconductor Products, MOSFET N-CH 15V 30MA 3CP Original PDF
    2SK3723 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2SK3723 Panasonic N-Channel Enhancement Mode MOSFET Original PDF
    2SK3723 TY Semiconductor N-Channel Enhancement Mode MOSFET - TO-263 Original PDF
    2SK3724 Sanken Electric MOSFET Original PDF
    2SK3724 Sanken Electric Devices for Automotive Application Original PDF
    2SK3725-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3726-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3727-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3728-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK372BL Toshiba Silicon N-Channel Junction Transistor Scan PDF
    2SK372GR Toshiba Silicon N-Channel Junction Transistor Scan PDF
    2SK372Y Toshiba Silicon N-Channel Junction Transistor Scan PDF

    2SK372 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3723

    Abstract: 2SK3723
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3


    Original     		PDF 2002/95/EC) 2SK3723 K3723 2SK3723

    2SK372

    Abstract: No abstract text available
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog－Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK372

    2SK3723

    Abstract: K3723
    Text: Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3723 2SK3723 K3723

    2SK3724

    Abstract: No abstract text available
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK3724

    K3723

    Abstract: ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc
    Text: Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF 2SK3723 O-263 K3723 K3723 ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching


    Original     		PDF 2002/95/EC) 2SK3723

    2SK3720

    Abstract: D1306
    Text: 2SK3720 注文コード No. N 8 1 7 3 A 三洋半導体データシート 半導体ニューズ No.N8173 とさしかえてください。 2SK3720 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。


    Original     		PDF 2SK3720 N8173 100MHz, IT08680 IT08682 100MHz ITR00807 2SK3720 D1306

    Untitled

    Abstract: No abstract text available
    Text: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3726-01MR O-220F

    2SK372

    Abstract: No abstract text available
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog－Switch, Constant-Current and Impedance Converter Applications • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK372

    450v 15a mosfet

    Abstract: No abstract text available
    Text: 2SK3725-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3725-01 O-220AB 450v 15a mosfet

    2SK3728-01MR

    Abstract: 2SK3728 2SK3728-01MR equivalent
    Text: 2SK3728-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3728-01MR O-220F 2SK3728-01MR 2SK3728 2SK3728-01MR equivalent

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 High avalanche resistance


    Original     		PDF 2SK3723 O-263 K3723

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    2SK372

    Abstract: No abstract text available
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK372

    K3723

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3


    Original     		PDF 2002/95/EC) 2SK3723 K3723

    2SK3722

    Abstract: 2SK372
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK3722 2SK372

    2SK372

    Abstract: No abstract text available
    Text: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK372 2SK372

    2SK3727

    Abstract: power mosfet 600v
    Text: 2SK3727-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3727-01 O-220AB 2SK3727 power mosfet 600v

    Untitled

    Abstract: No abstract text available
    Text: 2SK3720 Ordering number : ENN8173 N-Channel Silicon MOSFET 2SK3720 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF ENN8173 2SK3720

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 4.2M AX. High Breakdown Voltage : VGDg = —40V High Input Impedance : IGg g = —l.OnA Max. (VGg = —30V)


    OCR Scan     		PDF 2SK372 55MAX.

    2SK372

    Abstract: VGS-30V
    Text: TOSHIBA 2SK372 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SW ITCH, CONSTANT CURRENT AND Unit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2MAX. — High Breakdown Voltage : V q d s = —40V • High Input Impedance


    OCR Scan     		PDF 2SK372 55max 2SK372 VGS-30V

    2SK372

    Abstract: EIAJ C-3
    Text: TO SH IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. • High Breakdown Voltage : V q b s = —40V • High Input Impedance


    OCR Scan     		PDF 2SK372 55MAX. EIAJ C-3

    2SK372

    Abstract: No abstract text available
    Text: TOSHIBA 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR i <; k SILICON N CHANNEL JUNCTION TYPE 3 7 1 Unit in mm FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • High Breakdown Voltage : V q d s = —40V TTicrVi Tnmit Tmr>prl»nr»p


    OCR Scan     		PDF 2SK372 --40V 2SK372

    2SK372

    Abstract: No abstract text available
    Text: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. High Breakdown Voltage : V q b s = —40V High Input Impedance


    OCR Scan     		PDF 2SK372 55MAX. 2SK372