TT 56 N 1200 Search Results

Contextual Info: blE D E U p EC • 34032^7 ODOlOhE 7hH « U P E C TT 56 N, TD 56 N, D T 5 6 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

4900 SIEMENS

Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS

siemens igbt BSM 150 gb 100 d

Abstract: BSM100GB120D siemens igbt
Contextual Info: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •

thyristor TT 46 N

Abstract: TT 105 N 12 thyristor tt 162 n 12 thyristor TT 46 N 12 TT 46 N 800 thyristor TT 430 N 22 tt 104 n 12 thyristor tt 18 f 1000 thyristor TT 36 N thyristor tt 500 n 16
Contextual Info: Phase Control Thyristor Modules T ype V drm V rrm V Itrmsm A V dsm = V drm V rsm = V rrm+100V Itsm A 1 0 ms, Jpdt A zs 1 0 ms, ^vj max tyj max X103 350 0,61 ItAVM^c A /°C 180° el sin V TO V rT (d i/d t)cr tq (d v /d t)cr m fì MS typ. V/|JS DIN IEC 747-6

thyristor TT 46 N

Abstract: thyristor tt 66 n 16 thyristor tt 121 thyristor TT 95 N 1200 thyristor TT 36 N thyristor tt 500 n 16 TT105N TT 56 N 1200 thyristor tt 56 n 14 TT 93 N 08
Contextual Info: Phase Control Thyristor Modules T ype V V V dsm V It r m drm V rrm = V rsm sm It s m Jpdt llA V M /tc V T O fT (di/dt) cr tq A A 2S A /° C V m ß A /|J S MS V /|js DIN IEC 747-6 A 10 drm m s, ^vj max = V rrm+100V 10 m s, ^vj max 180° el s in tvi = Vi =

TD1501

Abstract: TD B6 HK 95 N pt118 t510s byv 25-1 T188F KFC7 bz plug TT 80 N 1200
Contextual Info: Outlines c ath o d e c ath o d e E-Cu-lead 25 mm E-Cu lead 25 silicon tu be red E-Cu-lead 0 5 m m ' silicon lead yellow I anode , anode - - case B T 72 h I 80 F. T 102 F, T 120 F, T 86 N, T 130 N, T 160 N, T 210 N case E 2 T 130 N, T 160 N K K ; i A ' -T-M

Contextual Info: S EM IK R O N zurück V rsm V rrm V drm V V 1300 1200 SKNH 56/12 E 1500 1400 SKNH 56/14 E 1700 1600 SKNH 56/16 E 1900 1800 SKNH 56/18 E SEMIPACK 1 Modules with Thyristor and Free-Wheeling Diode ld P 3/120, Tamb = 45 °C 70 A Symbol Conditions SKNH 56 SKNH 91 1>

EUPEC tt 105 N 16

Abstract: EUPEC tt 66 N 16 EUPEC TT 56 n 16 EUPEC TT 66 EUPEC TT 46 n 16 EUPEC TT 25 N EUPEC Thyristor TT 56 N PHASE CONTROL THYRISTOR MODULE TT 56 N of EUPEC tt 105 N 16 TT105N
Contextual Info: Phase control thyristor modules Vdrm •t r m s m It s m eupec m te / i 2dt I tavm ^ c D V TO • 3 4 D 3 5 117 0D0Q114 (dv/dt)cr (di/dt)cr It tts RthJC ■ upec RthCK tv j m ax V rrm V A 10 ms, 10 ms, tv) max tvj max 180°el sin. A A2s A/°C tv , = tv j

thyristor TT 46 N 1200

Abstract: thyristor TT 46 N thyristor TT 36 N TT 46 N 1600 TT 46 N 800 TT 80 N 1200 TT 95 N 1200 thyristor TT 36 DT18N td18n
Contextual Info: - 'i ase con'ro’ thyristor modules "ype It r m s m V d iim It s m / i 2d t hAVM^C V TO rT ( d i/ d t ) cr t„ = DIN Wj max IEC 747-6 (dv/dt)cr RthJC RthCK tv, max Outline V rhm V d jm = V crm V r ev i = V r r m + 100 V V A 10 ms, 10 ms. w 180 ”el sin.

thyristor TT 45 N 1200

Abstract: TT 56 N 1200 PHASE CONTROL THYRISTOR MODULE TT 56 N thyristor TT 46 N thyristor TT 46 N 1200 tt 46 n 1200 thyristor TT 36 N thyristor TT 18 N 1400 EUPEC TT 66 thyristor 45 n 1200
Contextual Info: Phase control thyristor modules EUPEC Type V drm •t r m s m It s m aMDBtîT? D D O D l l t MTE D / ¡ 2d t W m^C TTS • It d i/d t cr (d v/dt)cr Rthjc tv ,= tvj = tv j m ax tv] max typ. DIN IEC 747-6 DIN IEC 747-6 180 °el sin. V mQ A/pis V /ns K /W V(TO>

siemens igbt BSM 50 gb 120 d

Contextual Info: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

Contextual Info: SIEMENS BSM 50 GB 120 D BSM 50 GAL 120 D IGBT Module Preliminary Data V CE = 1200 V J c = 2 x 70 A at r c = 2 5 C / c = 2 x 50 A at T c = 80 C • • • • • Power module H alf-bridge/Chopper Including fast free-w heel diodes Package with insulated m etal base plate

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

IGBT Module BSM150GB120D

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Contextual Info: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule

siemens igbt BSM 200 GA 120

Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100
Contextual Info: bDE T> m 023SbQ5 GG4SCU E 5b2 « S I E G SIEMENS S X E K N S AKTIENSESELLSCHAF 7 IGBT Module Preliminary Data ^ ? - ^ 5 " BSM 200G A120D VCE = 1200 V / C = 275 A at Tc= 25 C / c =200 A at r c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

B2HKF

Abstract: thyristor TT 430 N 22 TT 46 N 800 TT 56 N thyristor tt 250 n 16 thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 121 thyristor TT 430 thyristor tt 500 n 16
Contextual Info: ISOPACK Modules Type ISOPACK Module VDRM, VRRM IFRMSM V A VDSM = VDRM VRSM = VRRM + 100 V IFSM ∫ i²dt Id/tC A A²s A/°C V TO 10 ms, tvj 10 ms, tvj max max rT RthJC RthCK tvj max °C V mΩ °C/W °C/W tvj = tvj max tvj = tvj max per arm per arm Single phase diode bridges

philips ceramic capacitors

Abstract: XC 2200 13001 s VH400 itw radial capacitors
Contextual Info: Leaded Ceramic Multilayer Capacitors M orio-Kap Series NPO, X7R, Z5U, Y5V / / X7R NPO tap. 10 d F 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1000 1200 1500 1800 2200 2700 3300 3900 4700 5600 6800 8200 0.01 uF 0.015

BSM15GD120D

Contextual Info: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’

TT 46 N 12

Abstract: tt 25 n powerblock EUPEC TT 105 N 12 TT56N EUPEC tt 18 n 14 TT46N EUPEC DD 105 N 16 L tt 36 n powerblock TT93N EUPEC tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronic Company Marketing Information DD 31 N screwing depth max. 8,5 fillister head screw M5 x 11 Z4 - 1 marking 68 15,5 20 20 80 92 AK K A VWK February 1996 DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

Contextual Info: Electrical Datasheet* GB20SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability