US6K Search Results

us6k

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 2.0 0.85Max. (4) (3) 0.77 1pin mark 0.2 (2) (1) 0~0.1 0.17 0.3 Abbreviated symbol : K02 zApplications Switching zPackaging specifications zInner circuit

Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

transistor 7B1284

Abstract: Z diode
Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

Contextual Info: 2.5V Drive Nch+Nch MOSFET US6K1 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01 Applications

3212

Abstract: 11156
Contextual Info: SPICE PARAMETER US6K1 by ROHM TR Div. * US6K1 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT US6K1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=12.595E-6

us6k

Abstract: TUMT6
Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOS FET US6K2 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (4) (3) 0.77 1pin mark 0.2 (2) (1) 0~0.1 0.17 0.3 Abbreviated symbol : K02 zApplications Switching zPackaging specifications

US6K

Abstract: US6K4
Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

Contextual Info: 2.5V Drive Nch+Nch MOSFET US6K1 zDimensions Unit : mm zStructure Silicon N-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications Switching Abbreviated symbol : K01

Contextual Info: US6K1 Transistors 2.5V Drive Nch+Nch MOS FET US6K1 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (3) 0.77 0.2 (4) 1pin mark 0.2 (2) (1) 0~0.1 0.17 0.3 Abbreviated symbol : K01 zApplications Switching zPackaging specifications

TUMT6

Abstract: us6k Z diode
Contextual Info: US6K1 Transistors 2.5V Drive Nch+Nch MOSFET US6K1 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01

Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

Contextual Info: 2.5V Drive Nch+Nch MOSFET US6K1 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications Switching Abbreviated symbol : K01

US6K4

Contextual Info: SPICE PARAMETER US6K4 by ROHM TR Div. * US6K4 NMOSFET model * Date: 2007/03/22 * This model includes a diode between source and drain. *D G S .SUBCKT US6K4 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=16.948E-6

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

RPI-1031

Abstract: SPICE MODEL OF I2C BUS FOR LED DRIVER BU16028KV laser diode spice model simulation BU2682MUV bu16028k triac spice model BU2682 RUM003N02* "cross reference" analog rgb to HDMI converter ic
Contextual Info: 2008.07 03 # New Products and Technology Visit our website for the latest product information New Products • LED Drivers for LCD Backlights ■ TV Encoders with Built-in AIE ■ High Brightness LED Numerical Displays Embedded ideas Search Clear, precise video signals for colorful, high resolution image generation

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

RPM973-H11

Abstract: RSB12JS2 RN242 7w led RPI-0126 mvr21 power supply LED 3w EMX18 PMR03 RB886CS
Contextual Info: Products for Mobile Phones RECOMMENDED DEVICES For RF Circuits For Audio Circuits Chip Tantalum Capacitors Detection Schottky Diodes TCTAS series RB886CS 0.9 0.37 ࡮Compact, high capacitance. ࡮Superior temperature characteristics: ࡮220µF in the 3216-10[1206] size AS case – best in the industry

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts