UBP 100 Search Results

ubp 100

Abstract: "line AMPLIFIER"
Contextual Info: Model UBP Universal Bi-Polar In-Line Amplifier DESCRIPTION The Model UBP bi-polar amplifier supplies a highly regulated bridge excitation voltage for the transducer and converts the millivolt signal of the transducer to a ±5 Vdc signal. The Universal In-line features two selectable excitation voltages, programmable gain settings, a wide adjustment range on the zero, and a

Sensotec pressure transducer

Abstract: Sensotec transducer Sensotec pressure wiring diagrams sensotec Sensotec transducer A Sensotec 60 pressure transducer Sensotec 42 Sensotec 43 Sensotec Pressure transducer A "Pressure Transducers" sensotec
Contextual Info: MODEL UBP UNIVERSAL IN-LINE TRANSDUCER AMPLIFIER BI-POLAR SUPPLY, VOLTAGE OUTPUT, LOW GAIN 5 to 166 mV/V 2080 Arlingate Lane, Columbus, Ohio 43228 • (614) 850-5000 Sensotec, Inc. 2080 Arlingate Lane Columbus, Ohio 43228 Copyright 1995 by Sensotec, Inc. all rights reserved

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Contextual Info: UbP¥ } 2 3105 K a sh iw a C o u rt Torrance. C A 9 0505 Phone: 800 5 7 9 -4 8 7 5 /(3 1 0 ) 534.1505 Fax (3 1 0 )5 3 4 .1 4 2 4 E -m ail w ebm aster@ led tro nics co m W ebsite: v a v w ledtrontcs com LEDTRONICS, INC: THE FUTURE OF LIGHT L u m in a ire P h o to m e tric R ep ort

TC4001UBP

Abstract: tc4011bp applications TC4011UBP IC - TC4001BP
Contextual Info: C2MOS DIG IT A L IN T E G R A T E D CIRCUIT S ILIC O N M O N O L IT H IC TC4001UBP, TC4011UBP TC4001UBP QUAD 2 INPUT NOR GATE TC4011UBP QUAD 2 INPUT NAND GATE TC4001UBP and TC4011UBP are 2 input NOR gate and 2 input NAND gate respectively. The pin connections

e2p 25

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M69KR096A

Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
Contextual Info: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

nor flash 1.8V

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

m36w0r6050u

Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
Contextual Info: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

TC4069 OSCILLATOR

Abstract: Toshiba TC4069 TC4069 TC4069UB tc4069ubp DIP14-P-300-2 TC4069UBF TC4069UBFN TC4069UBFT TC4069ubp japan
Contextual Info: TO SH IBA TC4069UB P/UBF/U BFN/U BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT Note The JEDEC SOP (FN) is not available in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the

M36W0R5040

Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h
Contextual Info: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM

Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

M30L0T7000T0

Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
Contextual Info: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM

M58WR064KT

Abstract: M36W0R M36W0R604
Contextual Info: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash

BGA-Z85

Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
Contextual Info: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

M36W0R5040

Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
Contextual Info: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features „ Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

Contextual Info: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

PSRAM

Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory

M36L0R7050U3

Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Contextual Info: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple