ULTRALAM 2000 Search Results

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

Contextual Info: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and

15650ETPBGA

Abstract: 81-ball MIL-STD-1553 terminals
Contextual Info: Multi-Protocol PBGA Mil- Std- Data Bus Interface Model # NHi-156XXPBGA The NHi PBGA family of Mil-Std-1553 terminals address the requirements for small, cost effective, reliable terminals suitable for critical military applications. NHi has solved the critical problem of

MBL105

Abstract: mbl10 top 8901
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS

Contextual Info: Multi-Protocol PBGA Mil- Std- Data Bus Interface Model # NHi-156XXPBGA The NHi PBGA family of Mil-Std-1553 terminals address the requirements for small, cost effective, reliable terminals suitable for critical military applications. NHi has solved the critical problem of

ultralam 2000

Abstract: Single Line TVS Diode 400W SMA
Contextual Info: AP603 High Dynamic Range 7W 28V HBT Amplifier Applications •  Mobile Infrastructure High Power Amplifier HPA 5x6 mm power DFN package Product Features  800 – 2200 MHz  +38 dBm P1dB  -50 dBc ACLR @ 1W PAVG  -51 dBc IMD3 @ 1W PEP  15% Efficiency @ 1W PAVG

mle350

Abstract: 6 pin TRANSISTOR SMD CODE XI BLF900-110 BLF900S-110 philips ceramic capacitors smd smd capacitor philips 0805 ultralam 2000 top 8901 MBL10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Supersedes data of 2003 Sep 22 2004 Feb 04 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications • • • • • Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features • • • • • •

AP562-F

Contextual Info: AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Product Features Product Description • 3.3 – 3.8 GHz Functional Diagram The AP562 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 12 dB gain, while being able to achieve high

MHVIC910HR2

Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

AP561-F

Contextual Info: AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications •     Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features      

AP562-F

Abstract: AP562-PCB3500 AP601
Contextual Info: AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Product Features Product Description Functional Diagram The AP562 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 12 dB gain, while being able to achieve high

Contextual Info: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1

SD2933

Abstract: 200B 700B M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

sc1430

Abstract: 100870
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

resistor 560 ohm

Abstract: sc1430 SD2933 200B 700B M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

sc1430

Abstract: 2896 80c
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

resistor 560 ohm

Abstract: SD2933 sc1430 200B 700B M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

MW6S010NR1

Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

resistor 560 ohm

Abstract: SD2933 2896 80c sc1430
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

SD2933

Abstract: 2896 80c resistor 560 ohm M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES