UMOS Search Results

DMG4710SSS

Abstract: DMG4710SSS-13
Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

DMG4712SSS

Abstract: DMG4712SSS-13
Contextual Info: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency

8005H

Contextual Info: TPCP8005-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 UMOSⅤ-H TPCP8005-H ○ 高効率 DC/DC コンバータ用 ○ ノートブック PC 用 単位: mm ○ 携帯電子機器用 0.33±0.05 小型､薄型で実装面積が小さい。

S3016SS

Contextual Info: DMS3016SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

DS3205

Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

MCM4517-15

Abstract: MCM4517-12 MCM6664 MAS 10 RCD MCM4517 MCM4116 10-MCM4 MCM-4116
Contextual Info: MCM4517 ! 6 .3 8 4 - B IT D Y N A M I C R A M ie M', •M 'lh n o ry UMOS is a ' 6 3 8 ^ - b - i . h : q h - s p e e d , d y n a m i c R a n d o m - A c c e s s MOS O r c d c . / e O -is 16 .384 o n e o n w o r d s a n d f a b r i c a t e d u s in g hig»’ ¡ > e - fo r m a n c e

DMG4710SSS

Abstract: DMG4710SSS-13 G471
Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

G4932LD

Abstract: DMG4932LSD
Contextual Info: DMG4932LSD NEW PRODUCT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

Contextual Info: DMG4712SSS N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency

Contextual Info: DMG4932LSD N EW PRODU CT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

DS3205

Contextual Info: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

NP75P04

Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
Contextual Info: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:

DMG4712SSS

Abstract: DMG4712SSS-13
Contextual Info: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

M2SK3295

Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Contextual Info: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value

S3015SS

Abstract: DMS3015SSS DS32096 DMS3015SSS-13
Contextual Info: DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency

G4932LD

Abstract: DMG4932LSD DS321
Contextual Info: DMG4932LSD NEW PRODUCT ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency Low On-Resistance

nec li ion

Abstract: FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712
Contextual Info: LINEUP LINEUP OF 8-PIN SOP POWER MOSFET Toshihiko Ooishi DMOS Planer structure Source UMOS (U-Groove) structure Gate Source n+ Rch Gate n+ RJFET lower P Rch RJFET REPI n- REPI Rbulk Rbulk n+ Drain nn+ Drain Fig. 1 Comparison of Structure of Power MOSFET

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

"seat heater"

Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
Contextual Info: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:

DMG4712SSS

Abstract: DMG4712SSS-13
Contextual Info: DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency

Contextual Info: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)

Contextual Info: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)

Contextual Info: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)