UPD421 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-W ORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC The MC-422000AB72F is a 2,097,152 words by 72 bits dynam ic RAM m odule on which 9 pieces of 16 M DRAM: ,uPD4217800 are assem bled. This m odule provides high density and large quantities of m em ory in a small space w ith o u t utilizing the

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424FG641 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FG641 is a 4,194,304 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM : ,uPD4216405 are assembled.

Contextual Info: UPD4216400LE-60 IL08 * C-MOS 16M 4M WORDx4 -BIT DYNAMIC RAM -TOP VIEW- 1 V DD (+5V) I/O 1 2 GND 28 27 I/O 4 I/O 2 3 26 I/O 3 WE 4 25 CAS RAS 5 24 OE A11 6 23 A9 10 11 12 13 16 17 18 19 20 23 9 6 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 I/O I/O I/O I/O

mc 668 L ic

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000AA64 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C-422000AA64 is a 2,097,152 w ords by 64 bits dynam ic RAM m odule on w hich 8 pieces of 16 M DRAM: ,uPD4218160 are assembled. This m odule provides high density and large quantities of memory in a small space w ithout utilizing the surfacem ounting technology on the printed circuit board.

UPD4217400

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-W ORD BY 36-BIT DYNAM IC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 w ords by 32 bits dynam ic RAM m odule on which 8 pieces of 16 M DRAM: ,uPD4217400 are assembled.

Contextual Info: UPD42102C-1 IL00 * C-MOS 9K 1135 x 8 -BIT FIFO MEMORY —TOP VIEW— 24 Q0 OUT 1 24 D0 IN Q1 OUT 2 23 D1 IN 23 22 21 16 Q2 OUT 3 22 D2 IN 15 14 Q3 OUT 4 21 D3 IN 13 8 RE IN 5 20 WE IN 17 19 RSTR IN 19 RSTW 6 7 GND IN 6 D0 Q0 D1 Q1 D2 Q2 D3 Q3 D4

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-422000LFB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO D escription The MC-422000LFB72F is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM: ,uPD4217805L are assembled.

PD421001

Contextual Info: E C ELECTRONICS INC OSE D "I b 4 2 7 5 E 5 O o a i a S T 3 6427525 N E C ELECTRONICS 05E 21859 INC NEC NEC Electronics Inc. Description The/uPD421001 is a nibble version, 1,048,576-word by 1-bit dynamic CM OS RAM designed to operate from a single +5-volt power supply. Advanced polycide

MC-421000F32

Abstract: MC-421000F32BA-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-421000F32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-421000F32 is a 1,048,576 words by 32 bits dynamic RAM module on which 2 pieces of 16 M DRAM: ,uPD4218165 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

14 pin LCD monocrome connector

Abstract: lcd ramdac capacitor bc series 10uf/63V toshiba lcd power board schematic LCD dots toshiba 320X240 LP29 CORE SED1354F hitachi lcd backlight schematic lcd 240 128 ts SED1354
Contextual Info: MF1072-02 ll er s o r e t ri n 54 13 ED Do a M t cs i h p a r S trix G o e C S D LC c Te c i hn a M al l a nu NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

NEC 555

Abstract: 511000 18pin nec v70 18PIN UPD421000V-12 UPD421000V-80 UPD421001C-10 UPD421001C-80 UPD421001LA-10 UPD421002C-80
Contextual Info: - 209 IM CMOS -f ^ £ tt « TRAC max ns CC) V Dynamic f' R A M (1 0 4 8 5 7 6 x 1 ) > 7 fttï TRCY min (ns) TCAD min (ns) TAH Hin (ns) TP min (ns) m 18PIN m TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C IDD (V) (mA) A I DD STANDBY ( I SB/ I SB2)

304X4

Abstract: 44C4000 KM44C4100-7 KM44C4000-6 UPD4217400-70 UPD4216400-80 K1174 Hitachi Scans-001
Contextual Info: - 1 6 M CMOS A 4 m & tt £ CC TRAC max ns) [ Dynami c -y * TRCY TÇAD TAH (ns) (ns) (ns) R A M ( 4, > •? ít ft TP mir. (ns) TWCY min (ns) TDH nin (ns) TRWC min (ns) 194, % V D D or V C C (V) 3 0 4 x 4) I DD max (raA) 2 8 P I N X m I DD STANDBY SB/1 SB2)

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

uPD42S16405-60

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The /¿PD42S16405, 4216405 are 4,194,304 w ords by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

UPD42S17805LG5-A60-7JD

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿J P D 4 2 S 1 7 8 0 5 L , 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The /xPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which

D42S18160

Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Contextual Info: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.

PD42101

Contextual Info: NEC ffPD42101 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The ¿iPD42101 is a 910-word by 8-bit line buffer fabri­ cated with a CMOS silicon-gate process. The device helps to create an NTSC flicker-free television picture noninterlaced scan conversion by providing intermedi­

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.