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    65G5

    Abstract: NEC 4216165-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165 uPD4216165 16-BIT, PD42S16165, PD42S16165 50-pin 42-pin uPD42Sl6l65-50 iuPD42S16165-60 65G5 NEC 4216165-60

    RE300

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /fPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode _ _ capability realize high speed access and low pow er consumption.


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    PDF uPD42S17800L uPD4217800L The/iPD42S17800L, 4217800L pPD42S17800L 28-pin 17800L 7800L-A uPD42Sl RE300

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT r>D42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The /¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynam ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16800L, 42S17800L can execute CAS before RAS self refresh see


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    PDF D42S16800L, 4216800L, 42S17800L, 4217800L uPD42S16800L uPD4216800L uPD42S17800L uPD4217800L 42S17800L

    NEC 4218165-60

    Abstract: PD42S18165-60
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S18165 uPD4218165 16-BIT, luPD42S18165 /rPD42S18165 42S18165. 50-pin 42-pin PP42S18165, IR35-207-3 NEC 4218165-60 PD42S18165-60