UPG158TB Search Results

marking G1m

Contextual Info: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double

MARKING G1M

Contextual Info: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz

Contextual Info: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital

Contextual Info: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital

Contextual Info: PRELIMINARY DATA SHEET NEC L,S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: T he U P G 15 8T B is an L-band S P D T S ingle Pole Double Throw G aA s FET sw itch w h ich w a s d e velope d fo r digital cellular, c ord le ss tele ph on e and o th e r L,S -band w ire le ss a p p li­

UPG158TB

Abstract: UPG158TB-E3 VP215 HS350
Contextual Info: NEC's ½W UPG158TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and

Contextual Info: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz

Contextual Info: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double

NKG3184A

Abstract: KSS 12Mhz crystal oscillator
Contextual Info: LMX5251 www.ti.com SNOSCW3A – FEBRUARY 2004 – REVISED APRIL 2013 LMX5251 Bluetooth CMOS Radio Check for Samples: LMX5251 FEATURES – Integrated Radio Frequency Voltage Controlled Oscillator RFVCO – Dual on-chip Voltage Regulators:) – Input Voltages 2.85V–3.6V

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

nec gaas dot code

Abstract: UPD5710TK UPG158TBNR UPG168TBNR UPG2008TKNR UPG2009TB UPG2010TB UPG2030TB UPG2030TK UPG2179TB
Contextual Info: NEC GaAs RFIC Switches www.cel.com SPDT Dual Control Switches TYPICAL ELECTRICAL CHARACTERISTICS TA = 25°C Frequency range: 0.1 to 2.5 GHz Part Number Features Control Voltages (V) Insertion Loss (dB) Isolation Input Power @2 GHz @0.1 dB (dB) compression point

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

BL2012-05B2450

Abstract: AN5000 BL2012 SGN5010 IS11LV5010 QFN48 S0805 uPG158TB 10nf capacitor ISSI38
Contextual Info: ISSI IS11LV5010 BluetoothTM Transceiver PRELIMINARY INFORMATION JUNE 2003 FEATURES • A component of ISSI’s family of complete hardware and software BluetoothTM Solutions • Complete 2.45GHz radio transceiver in lowest-cost CMOS silicon • Complete Bluetooth GFSK data modem

Contextual Info: LMX5251 www.ti.com SNOSCW3A – FEBRUARY 2004 – REVISED APRIL 2013 LMX5251 Bluetooth CMOS Radio Check for Samples: LMX5251 FEATURES – Integrated Radio Frequency Voltage Controlled Oscillator RFVCO – Dual on-chip Voltage Regulators:) – Input Voltages 2.85V–3.6V

LMX5100

Contextual Info: LMX5251 www.ti.com SNOSCW3A – FEBRUARY 2004 – REVISED APRIL 2013 LMX5251 Bluetooth CMOS Radio Check for Samples: LMX5251 FEATURES – Integrated Radio Frequency Voltage Controlled Oscillator RFVCO – Dual on-chip Voltage Regulators:) – Input Voltages 2.85V–3.6V

bluetooth transmitter receiver circuit diagram

Abstract: qualcomm clock crystal schematic bluetooth transceiver V1.2 bluetooth transmitter circuit diagram schematic diagram bluetooth headset C1395 S101 S102 S103 S105
Contextual Info: PRELIMINARY DATA SHEET SKY72314: Ultra Low Power Bluetooth RF Transceiver APPLICATIONS DESCRIPTION • • • • • The SKY72314 is Skyworks' next generation lowest powered, fully integrated single-chip Bluetooth radio transceiver for Qualcomm-based systems. Fully compliant with Bluetooth

BL2012-05B2450

Abstract: JEP106-K Signia Technologies JEP-106K AN5000 D908 HMC190 bl2012 D707 D709
Contextual Info: SGN5010 Bluetooth Transceiver PRELIMINARY SPECIFICATION Key Features: Product Description: The Signia SGN5010 IC is a low-cost, fully integrated CMOS radio frequency RF transceiver and GFSK data modem optimized for use in Bluetooth™ communications applications

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿ iP G 1 5 8 T B L, S- BAND SPDT SWITCH DESCRIPTION The ^¡PG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band w ireless application. The device can operate from 500 MHz to 2.5