UTC 801 Search Results
UTC 801 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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UTC801 | Unisonic Technologies | 3/4 STRINGS Xmas LILGHT CONTROL | Original | 47KB | 1 | |||
UTC801 | Unisonic Technologies | 3/4 Strings Xmas Light Control | Original | 41.73KB | 2 |
UTC 801 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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application of sequential circuit
Abstract: UTC 801 sequential IC sequential
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QW-R120-001 application of sequential circuit UTC 801 sequential IC sequential | |
Contextual Info: UTC 801/802 INTEGRATED CIRCUIT 3/4 STRINGS Xmas LIGHT CONTROL FEATURES *Adjustable flash rate. *Programmable 2/3/4 strings of bulbs. *UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. |
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QW-R120-001 | |
Light Controller
Abstract: UTC801
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QW-R120-001 Light Controller UTC801 | |
2SC2235
Abstract: transistor 2sC2235 2sc223 2SC2235L 2SA965 UTC 2SC2235L
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2SC2235 2SA965 2SC2235L 2SC2235G 2SC2235-x-T9N-B 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B 2SC2235-x-T9N-K 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K 2SC2235 transistor 2sC2235 2sc223 2SC2235L 2SA965 UTC 2SC2235L | |
sot-23 2LContextual Info: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23 |
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MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 2L | |
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2N5401 -150V 625mW QW-R201-001 | |
Contextual Info: UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES *Complimentary to 2SA965 1 TO-92NL 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2SC2235 2SA965 O-92NL QW-R211-012 | |
2SC2235
Abstract: 2sc2235 datasheet transistor 2sC2235 2SA965
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2SC2235 2SA965 O-92NL QW-R211-012 2SC2235 2sc2235 datasheet transistor 2sC2235 2SA965 | |
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2N5401 -150V 625mW | |
2N5401Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2N5401 -150V 625mW QW-R201-001 2N5401 | |
Contextual Info: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER Collector-Base Voltage |
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2SD718 2SB688. QW-R214-003 | |
2sC2235Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2235 AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS NPN SILICON TRANSISTOR 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free |
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2SC2235 2SA965 O-92NL 2SC2235L-x-T92-B 2SC2235G-x-T92-B 2SC2235L-x-T92-K 2SC2235G-x-T92-K 2SC2235L-x-T92-R 2SC2235G-x-T92-R 2SC2235L-x-T9N-B 2sC2235 | |
marking G1 sot23 UTCContextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR |
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MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC | |
transistor 2sd718
Abstract: 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
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2SD718 2SB688. QW-R214-003 transistor 2sd718 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter | |
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Contextual Info: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER |
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2SD718 2SB688. QW-R214-003 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. |
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MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. |
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MMBT5551 MMBT5551 OT-23 O-236) MMBT5551G-x-AE3-R QW-R206-010. | |
Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2N5551 | |
utc 3845 D
Abstract: divide-by-32768 GP2021 IG GQ1R CH9E 854S utc 3845 GPS Receiver RF Front End 44-LEAD
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GP2021 12-Channel DS4077 32-bit ARM60 150mW GP2015 GP2010 MIL-STD-883B GP2021/IG/GQ1R utc 3845 D divide-by-32768 GP2021 IG GQ1R CH9E 854S utc 3845 GPS Receiver RF Front End 44-LEAD | |
Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified |
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2N5551 QW-R201-002 | |
2N5551Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2N5551 QW-R201-002 2N5551 | |
PA3112
Abstract: MSOP-10
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PA3112 150mW PA3112 MSOP-10 -150mW QW-R502-100 MSOP-10 | |
MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
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PA6112 150MW PA6112 MSOP-10 PA6112L -150mW MSOP-10 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T | |
MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
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PA6112 150mW PA6112 MSOP-10 PA6112L -150mW MSOP-10 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T |