V651 Search Results

EV02

Contextual Info: “HYUNDAI HY51 V65164,HY51 V64164 4M x 16-bit CMOS DRAM with Extended Data Out PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION T his 'a m ily is a 64M bit dynam ic RAM organized 4,194 304 x 16-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data O ut mode

Contextual Info: O K I Semiconductor MSM51 V65165 _ E 2 G 1 0 2 0 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V65165 is a 4,194304-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The V65165 achieves high integration, high-speed operation, and low-power

Contextual Info: LM V651,LM V652, LM V654 V651/LMV652/LMV654 12 MHz, Low Voltage, Low Power Amplifiers Texa s In s t r u m e n t s Literature Number: SNOSAI7I Sem iconductor V651/LM V652/LM V654 12 MHz, Low Voltage, Low Power Amplifiers General Description Features National's V651/LMV652/LMV654 are high performance,

Contextual Info: - H Y U N D A I « HY51V64164,HY51 V65164 4Mx16, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: - H Y U N D A I « HY51V64160.HY51 V65160 4Ux16, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: HYUNDAI HY51V64160,HY51 V65160 4M x 16-bit CMOS DRAM with Fast Page Mode PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION This fam ily is a 64M bit d ynam ic RAM organized 4,194,304 x16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed

Assmann Electronics v6515

Abstract: Thermagon kluber grease t-pli 210 v6515 kluber T-PLI 200 thermagon FSF52 Thermagon thermal grease T-PLI 210 thermagon
Contextual Info: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Comparison of thermal compounds and heat conducting foils The following information is the result of a comparative investigation of different heat conductive materials in the eupec laboratory. The examined types only represent a small

Contextual Info: V65173HGJ T -6E 4Mxie, 3.3V, 4K Ret, EDO, ET DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera­

4MXW

Contextual Info: C HHYum m i * HY51V64160A,V65160A 4MxW , Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

57V651620B

Contextual Info: V651620BTC 4Mx16-bit, 4K Ref., 4Banks. 3.3V D E S C R I PT I ON The Hynix H Y 5 7 V 6 4 162 0H G is a 67,1 0 8 ,8 64 -b it CMOS require large m e m o r y dens ity and high band wi dth . Synchronous DRAM, ideally suited for the main memory applications

Contextual Info: •HYUNDAI HY5DV654023, HY5DV658023, V651623 S 1M/2M/4MX16/x8/x4x4Banks DDR SDRAM DESCRIPTION HY5DV654023-8/10/12, HY5DV658023-8/10/12 and V651623-8/10/12 are high speed 3.3V I/0=2.5V) Double Data Rate(DDR) Synchronous DRAM’s fabricated with the Hyundai high performance CMOS process.

Contextual Info: •HYUNDAI HY51V64160, V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow

CCGA

Abstract: MKT-CCC376A ADC10D1000CCMLS ceramic rework tm2007 ADC10D1000CC
Contextual Info: Mechanical Shock and Vibration Report for 376 Ceramic Column Grid Array INTRODUCTION The aerospace industry continues to drive the performance of the High Speed Analog to Digital Converters to greater resolution, faster sampling speeds, and lower power in the smallest form

austerlitz WPS

Abstract: austerlitz wacker P12 v6515 Wacker igbt eupec V6515 Paste Dow Corning d 340 Dow Corning 340 wps 50gr
Contextual Info: APPLICATION NOTE Date: 2002-12-19 Page 1 of 4 AN Number: AN2002-12 Aging stability of various heatconducting pastes for use with modules without baseplates Heat-conducting pastes from various manufacturers were tested for their aging stability in conjunction with an

V-650

Abstract: LVHCMOS 652p 652h v650 651h V-650P 651s 3 pin
Contextual Info: ROHS-Compliant Product V-650 Series 1. Specification Specification: V-650H V-650A V-650S V-650P Frequency range: 100kHz . 90.0 MHz 90.0 . 155.52 MHz 10.0 . 155.52 MHz 44.736 . 155.52 MHz Nominal freq. Tolerance at Uc = 2.5 V, T = 25 ± 3°C: < + 10 ppm

rca 0190 transistor

Abstract: RCA-40972 ATC-100-B-150 RCA-40973 RCA-40974 VK-2000 v651 rca transistor ARCO VK2000
Contextual Info: File No. 597 RF Power Transistors Solid State Division 40972 40973 40974 1 .7 5 -, 10-, and 2 5 -W ,1 7 5 -M H z Silicon N -P -N O v e rla y Transistors F o r H igh-Pow er V H F A m p lifie rs Features: • Designed fo r v h f m o b ile tra n s m itte rs ■ 25 W m in . o u tp u t a t 175 M H z ( V ( ;c = 12.5 V )

47 njw

Abstract: marking q815
Contextual Info: »flY U H D ft! • HY51V64164A,H V65164A 4Mx16, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: Silicon Hyperabrupt K Alpha Varactor Diodes CKV2020 Series V6510 Series Features Medium to High Frequency Operation Guaranteed 10:1 Tuning Ratio from 2 to 10 Volts Q of 500 at 1 M H z Typical Maximum Ratings Reverse Voltage, V R: Sam e a s V b r Forward Current, lF:

875mil

Abstract: HY57V651610TC10
Contextual Info: “HYUNDAI > -— .• H V651610 2 Banks x 2M x 16 B it Synchronous ORAM DESCRIPTION The Hyundai V651610 is a 6 7 ,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. V651610 is organized as 2banks ot

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are