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    ITT Interconnect Solutions VP47095V8037

    Circular MIL Spec Connector
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    pro-power PV837 GROMMET PK 100

    Pvc Grommet; Grommet Type:Open; Cable Diameter Min:-; Cable Diameter Max:7.2Mm; Grommet Material:Pvc (Polyvinylchloride); Mounting Hole Dia:11.1Mm; Panel Thickness Max:1.6Mm; Grommet Colour:Black; Product Range:-; Body Material:Pvc Rohs Compliant: Yes |Pro Power PV837 GROMMET PK 100
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    Newark PV837 GROMMET PK 100 Pack 22 1
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    ITT Interconnect Solutions 000V83780

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    ITT Interconnect Solutions 000V83770

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    ITT Interconnect Solutions 000V83720

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    V837 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    V837 Knox Semiconductor 30V Vrrm, 56pF Capacitance Varactor Diode Scan PDF

    V837 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V836

    Abstract: V833 V838 V840 V839 V835 V837 V831 diode V830 V831
    Text: 5238534 KNOX SEMICONDUCTOR INC. IT Varactor Diodes 99D 00140 D DEj5E3fl534 DDDD14Q 0 T OI V830 to V840 Type Number Min V830 V831 V832 V833 V834 V835 V836 V837 V838 V839 V840 13.5 16.2 19.8 24.3 29.7 35.1 42.3 50.4 61.2 73.8 90.0 Ct Diode Capacitance Vr = 4 Vdc, f = 1 MHz


    OCR Scan     		PDF 5E3fl534 DD0D14D C4/C25 V900E V915E V920E V927E V933E V939E V947E V836 V833 V838 V840 V839 V835 V837 V831 diode V830 V831

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    MV830

    Abstract: C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838
    Text: MV830 thru MV840 SILICON Silicon voltage-variable capacitance diodes, signed for electronic-tuning applications from de­ to 15 1 0 0 pF. cathode end MAXIMUM RATINGS <TC = 2 5 ° C unless otherwise noted) Sym bol Value Unit Reverse Voltage VR 30 Vdc Forward Current


    OCR Scan     		PDF NIV830 MV840 MV830 33AS8) 30Vdc, C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    V839

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , In c ABRUPT VARACTOR DIODES MV830 - MV840 TYPE N UM BER C t DIODE C APACITA NCE Q, Q U A LIT Y FACTO R Vr = 4 Vdc f = 50 MHz MIN TYP Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX TR , TU N IN G RATIO f = 1 MHz C *4V / C-25V MIN


    OCR Scan     		PDF MV830 MV840 C-25V MV831 MV832 MV833 MV835 V839

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c , ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NU M BER Q, Q UALITY FACTOR Vr = 4 Vdc f = 50 M Hz MIN TYP D IODE CAPACITANCE V r = 4 Vdc, f = 1 M Hz pF MIN NOM MAX Ct TR, TUNING RATIO f = 1 M Hz C*4V / C-25V MIN TYP


    OCR Scan     		PDF MV830 MV840 C-25V MV831 MV832 MV833 MV834 MV835