VCE MAX 100 IC MAX 100MA NPN Search Results

Darlington pair IC

Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
Contextual Info: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V

ZTX869

Abstract: PS 307 5A DSA003778
Contextual Info: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

2M5087

Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.

t6753

Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

ZTX855

Abstract: VCB-200V DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

ZTX658

Abstract: NPN Transistor TO92 5V 200mA DSA003772
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Transition Frequency fT TYP. MAX. UNIT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

FMMT497

Abstract: FMMT597 0401mA DSA003696
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 – DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C

base resistance for SOT23

Abstract: FMMT491 FMMT591 DSA003695
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL -

T1048

Abstract: ZDT1048 DSA003723 zetex t1048
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

Contextual Info: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain %

ZTX657

Abstract: ZTX656 DSA003772
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10

MPS-004

Abstract: MPS004 2N4125 EBC 2n3704
Contextual Info: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current

100mA-1A

Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100

FZT757

Abstract: 200V 100MA NPN t6757 FZT657
Contextual Info: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

FMMT494

Abstract: DSA003696
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current

FMMT618

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

ZTX696B

Abstract: transistor 3247 DSA003773 ZTX696
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX696B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER Transition Frequency SYMBOL fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff MIN. 70 TYP. MAX. 200 6 80 4400 UNIT