VEBO 15V Search Results

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

VEBO-15V

Abstract: 2SC3651
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.

smd marking ks

Abstract: 2SA1813 VEBO-15V
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage 0.3V). (VCE(sat) High VEBO (VEBO 15V).

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,

Contextual Info: Transistors IC SMD Type Product specification 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). 1 Emitter 2 Base 3 Collector

VEBO-15V

Abstract: 2SC4181A VEBO15V High Vebo MARKING L15
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4181A Features High DC current gain:Hfe=1000 to 3200 Low VCE sat : VCE(sat)=0.07v TYP High VEBO: VEBO=15V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage

QST8

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

2SC4536

Abstract: 2SC454 2SC4568 T74100
Contextual Info: h:7 « S ±S ’ . S § m • 2 S C 4 5 3 6 : -7-i 5 afäimmVIWiHSo MiimvmtcMMv m i n * «Ä B l! Vceo (V 15 CATV"? Vebo (V) 3 Ic(mA) 250 Pt (W>* 2 T j (°C) 150 * « u s w 0 2 S C 4 5 3 7 S SL d i S : VHF/UHF ß v f i g i f t a M SHF Vceo (V) 11 Vebo (V)

QST8

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

Contextual Info: QST8 Transistors General purpose amplification −12V, −1.5A QST8 External dimensions (Unit : mm) Application Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO

Transistor

Abstract: TRANSISTOR W 59 IC data book free download MARKING CODE AA transisto VCBO 2SD1757K bvceo marking 25 SC-59 power MARKING 30 ROHM
Contextual Info: 2SD1757K Transistors Power Transistor 15V, 0.5A 2SD1757K !External dimensions (Units : mm) VCBO VCEO 30 15 V V Emitter-base voltage Collector current VEBO IC 6.5 0.5 V A PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 0.3to0.6

2SD1757K

Abstract: T146
Contextual Info: 2SD1757K Transistors Power Transistor 15V, 0.5A 2SD1757K !External dimensions (Units : mm) VCBO VCEO 30 15 V V Emitter-base voltage Collector current VEBO IC 6.5 0.5 V A PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 0.3to0.6

2SD1757K

Abstract: T146
Contextual Info: 2SD1757K Transistors Power Transistor 15V, 0.5A 2SD1757K zExternal dimensions (Unit : mm) VCBO VCEO 30 15 V V Emitter-base voltage Collector current VEBO IC 6.5 0.5 V A PC 0.2 W 0.3to0.6 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150

2SD1757K

Contextual Info: 2SD1757K Transistors Power Transistor 15V, 0.5A 2SD1757K External dimensions (Unit : mm) VCBO VCEO 30 15 V V Emitter-base voltage Collector current VEBO IC 6.5 0.5 V A PC 0.2 W 0.3to0.6 ROHM : SMT3 EIAJ : SC-59 Junction temperature Tj 150 °C Storage temperature

NTE2672

Abstract: VEBO-15V
Contextual Info: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp

US6X5

Contextual Info: US6X5 Transistors Low frequency amplifier US6X5 6 (1) 0.2 zAbsolute maximum ratings (Ta=25°C) Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP

Contextual Info: MMBT3904 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

KTC8550S

Abstract: KTC8050S
Contextual Info: SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. Complementary to KTC8050S. E B L L UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current

Contextual Info: MMBT3904 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

2N3866

Abstract: Transistor 2N3866 2N3866 application note 200mhz 1w data 2n3866 ic 400ma, npn transistor voltage multiplier ic common emitter amplifier 2N3866 application 50 ohm 1w
Contextual Info: 2N3866 2N3866 Silicon NPN Transistor Frequency Multiplier and Driver in VHF/UHF Transmitters C B E WINTransceiver Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 30V 55V Collector-Base Voltage, VCBO 3.5V Emitter-Base Voltage, VEBO 400mA Continuous Collector Current, IC

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

KTC8050S

Abstract: KTC8550S 23 marking
Contextual Info: SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to KTC8550S. L UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC

KTC3882

Contextual Info: SEMICONDUCTOR KTC3882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. E B L UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Collector Current