VG2X Search Results

mqsi

Abstract: VG2X iso VG-10 VG10X VG3X 20kv silicon rectifiers VG-2X
Contextual Info: MICRO QUALITY / S E M IC O N D U C TO R , INC. High Voltage Diffused Silicon Rectifiers VG Series Minimum size V RRM 1KV to 20KV Diffused Silicon Junction Low Leakage Current 250 Nanosec. Reverse Recovery* STANDARD TYPES MQSI Part No. FAST RECOVERY TYPES Repetitive

VG2-35

Abstract: VG2-45 VG2-55 VG2-25 VG2X
Contextual Info: REV. B C D E 0.146 [3.7mm]— ] R.067 [R1,7mm] A flU 0.60 [15.2mm] DATE D ESCR IPTIO N Engineering Update w/o Changes Mounting Hole Update Removed -102 and -134 Parts Tolerance Update on .475" Thickness 03/01/04 04/09/09 08/25/09 09/09/10 APPRO VED M. C. T. Y.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

Contextual Info: HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS VA These rectifiers offer high voltage ranges in minimum-sized, epoxy-encapsulated packages with low leakage current. All ratings are obtained without the use of special heat sinks or mounting tech­ niques except VC Series .

Contextual Info: REV. B C D E 0.146 [3.7mm]— I R.067 [R1,7mm] HU 0.60 [15.2mm] 0.31 [7.9mm]- 0.046 [1.2mm]— II— 0 146+ ' ^ ^ SOA4 -.001 TYP. -Q 0.281 [7.1mm]Recommended Mounting Holes A ±.015 .38 B ±.015 (.38) 2.0 (50.8) 2.5 (63.5) 3.0 (76.2) 3.5 (88.9) 4.0 (101.6)

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

VG3X

Abstract: 20kv silicon rectifiers VG2X VG-12X 20KV VG-10 VG-12 VG-15 VG-15X VG-20
Contextual Info: MICROSEMI CORP/ MICRO SbE ] m bllSTG? G G 0 m b 3 ITS • NÚL M IC R c á QUALITY / SEMICONDUCTOR, INC. High Voltage Diffused Silicon Rectifiers vg \" V J ¿ - O ^ , Series Minimum size V RRM 1KV to 20KV Diffused Silicon Junction Low Leakage Current 250 Nanosec. Reverse Recovery*