VG3X Search Results

mqsi

Abstract: VG2X iso VG-10 VG10X VG3X 20kv silicon rectifiers VG-2X
Contextual Info: MICRO QUALITY / S E M IC O N D U C TO R , INC. High Voltage Diffused Silicon Rectifiers VG Series Minimum size V RRM 1KV to 20KV Diffused Silicon Junction Low Leakage Current 250 Nanosec. Reverse Recovery* STANDARD TYPES MQSI Part No. FAST RECOVERY TYPES Repetitive

varo semiconductor

Abstract: 1N4441 VARO VG20 IN4441 VG1X VG2X m55302/131-01 Varo VG12X IN444 VB25
Contextual Info: VARO SEMICONDUCTOR, INC. G P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 VOLTAGE DIFFUSED SILICON RECTIFIERS Varo high voltage and high voltage fast recovery time diffused silicon rectifiers are designed for industrial and commercial applications that require high reliability at an economical cost.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: REV. DESCRIPTION DATE A Engineering Update w/o Changes Ø.134 [Ø3.4mm] 0.377 [9.6mm] 0.136 [3.5mm] 0.067 [1.7mm] APPROVED M. C. 0.375 [9.5mm] 0.109 [2.8mm] 0.109 [2.8mm] 0.280 [7.1mm] 0.072 [1.8mm] 0.615 [15.6mm] A 2.00 [50.8mm] 0.188 [4.8mm] 03/01/04 0.437 [11.1mm]

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

Contextual Info: HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS VA These rectifiers offer high voltage ranges in minimum-sized, epoxy-encapsulated packages with low leakage current. All ratings are obtained without the use of special heat sinks or mounting tech­ niques except VC Series .

59354CFR

Abstract: VG33 VG-36
Contextual Info: REV. DESCRIPTION DATE A Engineering Update w/o Changes Ø.134 [Ø3.4mm] 0.377 [9.6mm] 0.136 [3.5mm] 0.067 [1.7mm] APPROVED M. C. 0.375 [9.5mm] 0.109 [2.8mm] 0.109 [2.8mm] 0.280 [7.1mm] 0.072 [1.8mm] 0.615 [15.6mm] A 2.00 [50.8mm] 0.188 [4.8mm] 03/01/04 0.437 [11.1mm]

VG3X

Abstract: 20kv silicon rectifiers VG2X VG-12X 20KV VG-10 VG-12 VG-15 VG-15X VG-20
Contextual Info: MICROSEMI CORP/ MICRO SbE ] m bllSTG? G G 0 m b 3 ITS • NÚL M IC R c á QUALITY / SEMICONDUCTOR, INC. High Voltage Diffused Silicon Rectifiers vg \" V J ¿ - O ^ , Series Minimum size V RRM 1KV to 20KV Diffused Silicon Junction Low Leakage Current 250 Nanosec. Reverse Recovery*