VGE15V Search Results

Contextual Info: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)

1MBI600S-120

Contextual Info: This material and tie ‘nhrmation herein 3s (he properly cf Fcji Electric Ca.UcJJhcy shall be nelihor nproducoa, copied. Icti. or disclosed n any wav whatsoever (or the use of any third psny.nc: used (or the manufacturing purposes without fha expross wtlncn consem of Fuji Siectrlc Co. Lid.

rc servo motor torque speed

Contextual Info: 6-Pack IGBT 1200 V 25 A FUJI @ TL@ G =STO SDË IGBT MODULE L series O u tlin e D ra w in g s • F e a tu re s • High S peed S w itching • Low S a tu ratio n V oltage 0 V oltage Drive ■ A p p lic a tio n s • Inverter fo r M o to r Drive • A C and DC S ervo Drive A m p lifie r

transistor BF 502

Abstract: 502 TJ
Contextual Info: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

ta9687

Abstract: 10N50A 10n40 10n50 10N40A TA943 10n5 TA9438 RCA 713 TA9437
Contextual Info: Insulated-Gate Bipolar Transistors IGTH10N40 IGTH10N40A IGTH10N50 IGTH10N50A IGTM10N40 IGTM10N40A IGTM10N50 IGTM10N50A IGTP10N40 IGTP10N40A IGTP10N50 IGTP10N50A File N um b er 1697 TERMINAL DIAGRAM N-Channel Enhancement Mode Conductivity-Modulated Power Field-Effect Transistors

h15120

Abstract: MBH15D-120
Contextual Info: Fuji New Semiconductor Products , | . — , i t TT — J V h M if K | _ _ _ 1 2 0 0 V /1 5 A |G B T 1MBH15-120,1MBH15D-120 Features • • ¡ tilU tt, • I f 4 '7 iM U M 7 7 R B S O A ,S C S O A 4 '£ ^ • Small molded package • Low power loss • Soft switching with low switching surge and noise

6MBI50FA-060

Abstract: 6MBI50FA060 MCR 100-6 P M603 rG510 rth 13 sp HF IGBT
Contextual Info: 6MBI50FA-060 50A IGBT —)V ' O utline Drawings IGBT MODULE ;iO|r IBS | 185 t 18.6 | 1B.S CO) *’*•* 17 4.5 14 4.6 14. 4.6 14 4 .5 IT ■ 4 M t : Features • f & L o w Saturation Voltage • « S E H l C M O S *— H * £ ) Voltage Drive • Variety of Power Capacity Series

transistor TT 2146

Abstract: APT50G50BN APT50G60BN APT50G60 538J
Contextual Info: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

7MBR30SA060

Abstract: tiac 251C i5ij fuji igbt 7mbr mbr30sa
Contextual Info: This m aterial and the Information herein Is the property o l Fuji Etecinc Co„lid.T hey Sh»H be neither reproduced, copied lent, or disclosed in any way w hatsoever for the use of any third partyrw used for the manufacturing purposes without ihe express written c o n se n t oí Fuji Electric Co. Ltd.

Contextual Info: GT8J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 .3 0 3 .2 ± 0 .2 2.7 ± 0 .2 i S- “ “ . High Input Impedance . High Speed : t f -O.35ys Max. . Low Saturation Voltage : V c E ( s a t ) “^ • 0V(Max.)

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package

Contextual Info: Modules 1200V GR Series Trade-Off Curves «< 1200V class » > Features •f Low Loss • turn-OFF switching loss ; approx. -25% compare with GS series • IGBT'sVcE sat ; typ 2.2V (-0.5V compare with GS series) 2 Improved Thermal Impedance • IGBT ; approx. -10% compare with

6mb120

Abstract: AL 60DV 6MBI200FB-060 J3009
Contextual Info: 6MBI200FB-060 200A IGBT : Outline Drawings IGBT MODULE : Features Low S aturation Voltage • te ts * a * /± • • lE E K l ( M O S ^ — U B ifi) • V olta ge Drive Variety o f Pow er Capacity Series * A p p lica tio n s > '< —f • AC, D C • Inverter fo r M o to r Drive

Contextual Info: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Description Features This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices