VHF MOSFET Search Results

BF965

Contextual Info: SIEM ENS BF 965 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e.g. CATV tuners Type Marking Ordering Code BF 965 - Q62702-F660

Q62702-F1055

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners BF 997 Type Marking Ordering Code tape and reel Pin Configuration

marking code 7G sot-143

Contextual Info: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997

403BF

Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 997 For VHF applications especially in TV tuners with extended VHF band Integrated suppression network against spurious VHF oscillations Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape

2019-5X

Abstract: GPS05144 Q67000-A5150 Q67006-A5150 S37 SMD
Contextual Info: TUA 2019-5X VHF I / VHF II / UHF-Tuner IC Preliminary Data Bipolar IC Features ● Few external components ● Frequency and amplitude-stable unbalanced oscillator for the VHF I-frequency range ● Frequency and amplitude-stable balanced oscillators for the VHF II- and UHF-frequency range

diode ring mixer

Abstract: Q67000-A5150 ring oscillator GPS05144 Q67006-A5150
Contextual Info: TUA 2019-5X VHF I / VHF II / UHF-Tuner IC Preliminary Data Bipolar IC Features ● Few external components ● Frequency and amplitude-stable unbalanced oscillator for the VHF I-frequency range ● Frequency and amplitude-stable balanced oscillators for the VHF II- and UHF-frequency range

neosid v6

Contextual Info: SIEMENS VHF I / VHF II / UHF-Tuner 1C TUA 2019-5X Preliminary Data Bipolar IC Features • Few external components • Frequency and amplitude-stable unbalanced oscillator for the VHF l-frequency range • Frequency and amplitude-stable balanced oscillators

MFE201

Abstract: MFE203 MFE201 application notes MFE202 s163h dual-gate
Contextual Info: '' N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED M O S FIELD-EFFECT TRANSISTORS • MFE201 thru . , . depletion mode dual gate transistors designed for VHF amplifier and mixer applications, MFE203 • MFE201 — VHF Amplifier MFE202 — VHF Mixer MFE203 — IF Am plifier

SMD package code V12

Abstract: 2009X mosfet HF amplifier SMD code V12 diode ring mixer S37 SMD SMD transistor package code V12 GPS05144 GPS05388
Contextual Info: TUA 2009X TUA 2009XS VHF I / VHF II / UHF-Tuner IC Preliminary Data Bipolar IC Features ● Few external components ● Frequency and amplitude-stable unbalanced oscillator for the VHF I-frequency range ● Frequency and amplitude-stable balanced oscillators for the

2009X

Abstract: code E5 SMD ic diode ring mixer SMD transistor package code V12 SAW-Filter SMD code V12 tv-tuner GPS05388 C2324 ring oscillator design
Contextual Info: TUA 2009X TUA 2009XS VHF I / VHF II / UHF-Tuner IC Preliminary Data Bipolar IC Features ● Few external components ● Frequency and amplitude-stable unbalanced oscillator for the VHF I-frequency range ● Frequency and amplitude-stable balanced oscillators for the

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

transistors mos

Contextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

3N211

Abstract: Depletion
Contextual Info: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

BLF246

Abstract: POWER MOSFET -N-CHANNEL
Contextual Info: BLF246 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .380 4L FLG FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz

all mosfet vhf power amplifier

Abstract: VF175-225 RF GAIN LTD VF175 silicone paste mosfet vhf power amplifier mosfet amplifier class ab rf vf17 H101X CLASS AB MOSFET RF amplifier
Contextual Info: VF175-225 175 W VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 175 - 225 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min

Contextual Info: Part Number: Integra IDM175CW300 TECHNOLOGIES, INC. VHF-Band RF Power MOSFET The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of

VF175-88

Abstract: RF GAIN LTD VF175 mosfet vhf power amplifier H101X all mosfet vhf power amplifier 175 w low-vhf amplifier
Contextual Info: VF175-88 175 W Low-VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • 54 - 88 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min

Contextual Info: BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners and professional communication

BF981

Abstract: philips rf mosfets philips bf988 sot 143 T103 BF96 BF98 BF991 BF960
Contextual Info: 49 RF/Microwave Devices Small Signal Field-Effect Transistors MOSFETS These are fo r applications in the VHF and UHF ranges, prim arily in RF input stages, mixers and VHF and UHF amplifiers. All our MOSFETs are available in both conventional and surface-mount execution, allowing circuit

300 watt mosfet amplifier

Abstract: ASI10707 VFT300-28 ms1250
Contextual Info: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz

Marking 2G2

Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain

marking code g1s

Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp
Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

marking K1 sot363

Abstract: AGC-10 BG3123 BG3123R VPS05604 152V16
Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain

IG-14

Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain