VN MOSFET Search Results

Contextual Info: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .

VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07

Abstract: 10n07 VNP10N
Contextual Info: ¿5 7 TY P E VNB10N07 VNK10N07FM VNP10N 07FI VNV10N07 S G S -T H O M S O N VN B 10N07/K 10N07FM :LICTIB@10 i VN P10N07FI/VN V10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET RDS on Vciamp 70 70 70 70 V V V V 0.1 n 0.1 n 0.1 n 0.1 a lllm 10 10 10 10

Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION

Contextual Info: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP

50n04

Abstract: SGS-Thomson mosfet
Contextual Info: £S 7 SGS-THOMSON * 7# VN H 50N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T A R G E T DATA TYPE VN H 50N 04 • ■ ■ . ■ . ■ ■ > . Vclamp 40 V R d S o ii 0 .0 1 2 n him 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

Contextual Info: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

10N06

Abstract: D10N06 diode gc6
Contextual Info: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 VND10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp

n713

Abstract: vnp49n
Contextual Info: •THOMSON VNP49N04FI MOfôlSLl&rmfflDCS VNB49N04/VNV49N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp VNP49N 04FI VNB49N04 VN V49N 04 42 V 42 V 42 V R d S< o i i 0.02 Q 0.02 Cl 0.02 £2 lllm 49 A 49 A 49 A . . . . . LINEAR CURRENT LIMITATION

J237

Abstract: VNK10N06 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON
Contextual Info: £ÿj SCS-THOMSON lœ iILIC TK O K liei V N K 10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ADVANCE DATA TYPE VN K 10N 06 . . . . . . . . . Vclamp RDS on llim 60 V 0 .15 £2 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

logic pulser specifications

Abstract: VN1304N3 TN0102N3 logic pulser 100v 500ma diode TP0102N3 zener diode 15v switch 100mA 100V high speed Zener Diode 200v high voltage diodes
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

VNP10N07 equivalent

Contextual Info: I / = T miiM MoemiLEeiriSMiniBi S G S - 1 H M S 0 N VNP10N07 "OMIMIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN P10N 07 • . ■ ■ . . . ■ . . V clamp RDS on llim 70 V o .i n 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

SGS-Thomson mosfet

Contextual Info: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

0610L

Abstract: 2222l 10kls VN10KLS
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V

logic pulser specifications

Abstract: VP1306N3 logic pulser
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

Contextual Info: e r SCS-THOMCON "* 1 Ê M SÜ iilLIC T M liiei VNH70N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G ET DATA TYPE VN H 70N 07 . . . . . . . . • . Vclamp 70 V R0S on 0 .0 1 5 n lllm 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

2222ll

Abstract: 10LLS ST C 236 DIODE 0605T
Contextual Info: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5

amperex LTA320

Abstract: Amperex LTA-320 LTA320 LTA-320
Contextual Info: LINEAR SYSTEMS LS320 MONOLITHIC BI-FET AMPLIFIER FEATURES * * * * * * DIRECT REPLACEMENT FOR AMPEREX LTA-320 HIGH INPUT RESISTANCE Rgs=100 Gohts min HIGH GAIN (Yfs=30,000 umhos Bin) LOW NOISE (Vn=25 uV typ) ADDITIONAL SCREENING AVAILABLE AVAILABLE IN: DIE FORM, TO-71, TO-92, SOIC

VP1306N3

Abstract: TP0102N3 equal transistors TP0620N3 pulser high voltage pulser vp13 TN0620N3 logic pulser TN0104N3
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

vniokm

Abstract: MOSFET VN2222L
Contextual Info: VN0610L, VNIOKE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number r DS on Max (Q) VGS(th)iV) Id (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VNÎ0KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V 0.8 to 2.5

kn2000

Abstract: VNH50N04
Contextual Info: Æ T S G S -T H O M S O N lerasmLHCTMDei V N H 5 0 N04 "OMNIFET”: FULLY AUTQPROTECTED POWER MOSFET TARGET DATA TYPE VN H 50N 04 . . . . . . . . . . Vclamp R D S o n him 40 V 0 .0 1 2 £2 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

FZ 44 NS

Abstract: vn 300 T VNP5N07 mosfet vn 10 vnk5n07 SGS-Thomson mosfet ipak VN MOSFET D5N07-1
Contextual Info: SGS-THOMSON MDO^miCTIfMOlgl VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VN D 5N 07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V RDS on 0 .2 0 .2 0 .2 0 .2 a. Q. a. Q. 11im 5 5 5 5 A A A A . . . . . .

FM15TF-9

Abstract: JRC 062 gun diode bias symbol JRC FF 30
Contextual Info: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A

Contextual Info: DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT AD CE FO RM AT NN AV DA VN AN C EI NI N FO RM A ITOI O Product Summary V BR DSS • • • • • • • • • • ID max RDS(ON) max TA = 25°C 0.99Ω @ VGS = 4.5V

100N04

Abstract: p 471 mosfet
Contextual Info: c ? SGS-IHOMSON • v # M€ra§ ilLiCTI3@ilû S VNW100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la m p R D S o n ) him VN W 100N 04 42 V 0 .0 1 2 n 100 A • . . ■ . ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION