VN2406 Search Results

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n

VN24061

Abstract: VN2406
Contextual Info: VN2406 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2406 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN2410L

Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
Contextual Info: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V

Contextual Info: bbS3T31 D03MDfl3 552 * A P X P h ilip s S e m ic o n d u c to rs VN2406L Data sheet status Product specification date of issue July 1993 N-channel enhancem ent m ode vertical D-M O S transistor N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - TO-92 variant

2406L

Abstract: VN2406
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

oni 350

Abstract: transistor c 4106 VN2406L
Contextual Info: VN2406L* M AXIM UM RATINGS Sym bol Value Unit Drain-Source Voltage Voss 240 V Drain-Gate Voltage V d GR 60 V Vg S Vg s M 'd ±2 0 ±4 0 Vdc Vpk 200 mA 'd m 500 mA Pd 350 mW 2.8 m w rc - °C Rating Gate-Source Voltage - Continuous — Non-repetitive tD s 50 /is

2406L

Abstract: VF25 VN2406
Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown

VN2406B

Abstract: VN2406
Contextual Info: liöE D SILICONIX INC • ÖE54735 GD14104 □ ■ VN2406B, VN2406D CT* S ilico ilic o rn ix Jm W in c co rp o ra te d N-Channel Enhan ce m en t-M od e M O S Transistors PRODUCT SUMMARY PART NUM BER TO-2Q5AD TO-39 V (BR)DSS fD S(O N ) (n ) (V) Id (A) PACKAGE

2406L

Abstract: VN2406 A120109
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a

Contextual Info: MOTOROLA Order this document by VN2406L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc

siliconix VN10KM

Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M

VN2406D

Abstract: VN2410* mosfet TN2410L VN2406L VN2410L VN2410LS
Contextual Info: _ TN2410L, VN2406D/E, VN241 OL/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Num ber rDS on Max (£2) VGs(th) (V) I d (A) TN 2410L 10 @ V GS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 1 0 V 0.8 to 2

D024 - M relay

Abstract: D024 philips D024 VN2406L
Contextual Info: • [^53=131 D024[]fl3 5S2 H A P X Philips Semiconductors Data sheet status Product spécification date of issue July 1993 VN2406L N-channel enhancement mode vertical D-MOS transistor N AMER P H I L I P S / D I S C R E T E FEATURES PIN CONFIGURATION b?E D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ir TMOS FET Transistor N -Channel — Enhancement VN2406L 3 DRAIN Motorola P rotor ed Device GATE TMOS MAXIMUM RATINGS Rating D rain -S ou rce Voltage 1 SOURCE Symbol Value Unit Vdc VDSS 240 D ra in -G a te Voltage V d GR

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VN2406L QUICK REFERENCE DATA FEATURES • Very low RDSon • Direct interface to u-m us, I I L, etc V qs drain-source voltage DC • High-speed switching VGSth

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

VN2406LZL1

Abstract: VN2406 VN2406L TO-92 CASE
Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 240 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

VN2406L-G

Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V

VNDB24

Abstract: TN201 VN2406L
Contextual Info: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 • VN2406D Single TO-92 TO-226AA • VN2406L, TN201 OL, TN2410L Single TO-237 • VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)

C031411

Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode