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    Vishay Siliconix VP1008L

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    VP1008L Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VP1008L Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP1008L Vishay P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP1008L Vishay Intertechnology P-Channel 80-V (D-S) MOSFET Original PDF
    VP1008L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VP1008L Unknown FET Data Book Scan PDF
    VP1008L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP1008L Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP1008L Topaz Semiconductor -100 V, 5 ?, P-channel enhancement-mode D-MOS power FET Scan PDF
    VP1008L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VP1008L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5


    Original     		PDF VP0808L, VP1008L VP0808L O-226AA) S-00530--Rev. 03-Apr-00 VP0808L VP1008L

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original     		PDF VP0808L, VP1008L VP0808L 18-Jul-08 VP0808L VP1008L

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original     		PDF VP0808L, VP1008L VP0808L 08-Apr-05 VP0808L VP1008L

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: VP0808B/L/M, VP1008B/L/M Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M -80 -100 1 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = -10 V 5 @ VGS = -10 V 5 @ VGS = -10 V


    Original     		PDF VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O226AA) 37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M

    siliconix marking code

    Abstract: VP0808L VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original     		PDF VP0808L, VP1008L VP0808L O-226AA) S-04279--Rev. 16-Jul-01 siliconix marking code VP0808L VP1008L

    VP8080

    Abstract: VP1008 VP0808 VP0808B VP0808L VP1008B VP1008L
    Text: VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-39 TO-92 -80V 5Ω -1.1A VP0808B VP0808L -100V 5Ω -1.1A VP1008B VP1008L Advanced DMOS Technology High Reliability Devices


    Original     		PDF VP0808 VP1008 VP0808B VP0808L -100V VP1008B VP1008L VP8080 VP1008 VP0808 VP0808B VP0808L VP1008B VP1008L

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


    Original     		PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Untitled

    Abstract: No abstract text available
    Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =


    OCR Scan     		PDF YP0808B/L/M, YP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O-226AA) P-37655--

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
    Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180


    OCR Scan     		PDF VPMH10 300us, VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P

    Untitled

    Abstract: No abstract text available
    Text: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology


    OCR Scan     		PDF VP0808 VP1008 VP0808B VP1008B -100V VP0808L VP1008L VP1008 VP0808

    VP8080

    Abstract: No abstract text available
    Text: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L


    OCR Scan     		PDF VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 VP8080

    VP1008

    Abstract: No abstract text available
    Text: Super te x inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / B V cos Order Number / Package R d S ON *D<ON) (max) (min) TO-39 TO-92 VP0808L VP1008L -80V 5Ü -1.1A VP0808B -100V 5U -1.1A VP1008B Advanced DMOS Technology


    OCR Scan     		PDF VP0808 VP1008 VP0808L VP1008L VP0808B -100V VP1008B 300tis 000437D VP1008

    Untitled

    Abstract: No abstract text available
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V {B R )D S S (V ) rD S (on) Max (Q) I d (A) V GS ( t h ) ( V ) VP0808L -8 0 5 @ V Gs = - 1 0 V - 2 t o -4 .5 -0 .2 8 VP1Q08L -1 0 0 5 @ V qs = - 1 0 V - 2 to -4 .5


    OCR Scan     		PDF VP0808L, VP1008L VP0808L VP1Q08L S-04279-- 16-Jui-01 O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: V P 0 80 8 Supertex inc. ^ VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B ^dss ^ Order Number / Package ^DS ON ^O(ON) b v dgs (max) (min) TO-39 TO-92 -80V 5i2 -1.1 A VP0808B VP0808L -100V 5 fi -1.1A


    OCR Scan     		PDF VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 300ms

    Untitled

    Abstract: No abstract text available
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5


    OCR Scan     		PDF VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Appli-12 P-37655--

    JR 3610

    Abstract: RT 083 206af 44464
    Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package


    OCR Scan     		PDF ----------------T-29-25 O-226AA O-237 808CHP VP08Q8L VP1008CHP VP1008L VP1008M -100\i VP1008 JR 3610 RT 083 206af 44464

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    VPDS06

    Abstract: No abstract text available
    Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d


    OCR Scan     		PDF VPDS06 6-204VP1008B) VPDV10 VPDS06

    VP0808M

    Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P