VQ200 Search Results

DS10 diode

Abstract: diode DS10
Contextual Info: VQ2001 inc. P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package B V DSS/ R b v dgs max (min) Quad Ceramic DIP* -30V 2.0ÌÌ -1.5A VQ2001P '□(ON) d S(ON) * 14-pin side-brazed ceram ic DIP. Advanced DMOS Technology

quad p-CHANNEL

Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,

b0725

Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Contextual Info: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180

quad p-CHANNEL

Abstract: VQ2004J
Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

all transistor

Abstract: FAST DMOS FET Switches p-CHANNEL P-Channel Enhancement Mode Vertical DMOS FET DIODE S4 41 FAST DMOS FET Switches p-channel DMOS VQ2006P
Contextual Info: VQ2006 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -90V 5.0Ω -1.0A VQ2006P Quad Ceramic DIP* * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology High Reliability Devices

VP0300M

Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,

VQ2000

Abstract: VQ2000J
Contextual Info: SILICONIX INC IflE D Ô254735 001413? 4 C X 'S iK c o n ix VQ2000 SER IES in c o rp o r a t e d 'T 'U i -7-S P-Channel Enchancem ent-M od a M O S Transistor Arrays PRODUCT SUMMARY PA R T NUMBER 14-PIN DIP SID E B R A Z E ' Id A V(BR)DSS r D S ( O N ) m (V)

VP2410

Contextual Info: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L

Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5

Contextual Info: V Q 20 06 tìi Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ R d S<ON Order Number / Package ' ckon ) b v dgs max) (min) Quad Ceramic DIP* -90V 5.Oil -1.0A VQ2006P * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology

VP0300B

Abstract: VQ2001P VP0300L VP0300LS VQ2001J
Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5

VP0300M

Abstract: VP0300B
Contextual Info: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2

S4 12

Contextual Info: VQ2001 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR|DSS V Q 2001J -3 0 VQ 2001P 2 -3 0 2 TOP VIEW Dual-ln-Line Package Id (A PACKAGE - 0 .6 Plastic - 0 .6 S idebraze Ï7] D4

VP0300M

Abstract: 150EC VP0300L
Contextual Info: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V

Contextual Info: VQ2006 Oh Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss / B V dqs -90V R d S<ON Order Number / Package •d <o n > m in ) (max) Quad Ceramic DIP* -1.0A 5.0Q VQ2006P * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology

p-channel DMOS

Abstract: P-Channel Enhancement Mode Vertical DMOS FET relay 12v 5 pin VQ2001P
Contextual Info: VQ2001 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -30V 2.0Ω -1.5A VQ2001P Quad Ceramic DIP* * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology High Reliability Devices

VP0300M

Abstract: VP0300L
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

s4 vishay

Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

n 6113 transistor

Abstract: c 6113 transistor
Contextual Info: A153S& VQ2004 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) (n ) (A) PACKAGE VQ2004 -60 5 -0.41 All VQ2006 -90 5 -0.41 All Performance Curves: VPDV10 •d

b0725

Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching