VT30CT Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: DUAL E LE M E N T P H O T O C O N D U C T IV E C E L L VT300C T Series PACKAGE D IM EN SIO N S inch mm .355 (9.02) .016(0.41) .365 (9.27) .019(0.48) DIA. 1 .320 (8.13) =#= .330 (8.38) t .035 (0.89) - * .250 (6.35) .050 (1.27) .172 (4.37) 1.00(25.4) .202 (5.13)

Photocell LDR

Abstract: Vactec VTL5C10 LDR night light circuit VT93N1 VTL5C3 PHOTOCOPIER photoconductive cells VT90N2 VT90N1 VTL5C2
Contextual Info: 1744-2012:QuarkCatalogTempNew 9/10/12 4:16 PM Page 1744 TEST & MEASUREMENT 20 Photoconductive Cells, Optoswitches and Optoisolators Photoconductive Cells Photoconductive cells provide a very economical and technically superior solution for many light level sensing applications. They offer wide dynamic range and sensitivity

VT30CT

Abstract: VT33CT VT300CT
Contextual Info: DUAL E LE M E N T P H O T O C O N D U C T IV E C E LL VT300C T Series P A C K A G E D IM E N S IO N S inch mm .355 (9.02) .016 (0.41) .365 (9.27) " ‘ .019(0.48) DIA. t .330 (8.38) M 2 t " -1- U -1/- .320 (8.13) = t 3 1 1 = .195 (4.95)