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    WFS TRANSISTOR Search Results

    WFS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    WFS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    WFs transistor

    Abstract: Siemens transistor WFs wfs marking
    Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23


    OCR Scan     		Q62702-C2254 OT-23 300tis; WFs transistor Siemens transistor WFs wfs marking PDF

    Contextual Info: BCR 112 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 112 WFs Pin Configuration 1=B 2=E Package


    Original     		VPS05161 EHA07184 OT-23 Oct-19-1999 PDF

    Q62702-C2284

    Contextual Info: BCR 112W NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112W WFs 1=B Q62702-C2284 Package 2=E 3=C SOT-323


    Original     		Q62702-C2284 OT-323 Nov-26-1996 Q62702-C2284 PDF

    BCR112W

    Abstract: VSO05561 WFs transistor
    Contextual Info: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR112W VSO05561 EHA07184 OT323 Jul-16-2001 BCR112W VSO05561 WFs transistor PDF

    Q62702-C2254

    Contextual Info: BCR 112 NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112 WFs 1=B Q62702-C2254 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		Q62702-C2254 OT-23 Nov-26-1996 Q62702-C2254 PDF

    Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		Q62702-C2254 OT-23 0535b05 PDF

    WFs transistor

    Abstract: VSO05561
    Contextual Info: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package


    Original     		VSO05561 EHA07184 OT-323 Oct-19-1999 WFs transistor VSO05561 PDF

    BCR112W

    Abstract: VSO05561
    Contextual Info: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR112W VSO05561 EHA07184 OT323 Nov-29-2001 BCR112W VSO05561 PDF

    BCR112

    Contextual Info: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR112 VPS05161 EHA07184 Jul-16-2001 BCR112 PDF

    BCR112

    Contextual Info: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR112 VPS05161 EHA07184 Nov-29-2001 BCR112 PDF

    WFs transistor

    Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
    Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W PDF

    WFs transistor

    Abstract: WFs SOT23
    Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 PDF

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23 PDF

    BCR108W

    Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
    Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		BCR112. BCR112U: BCR112/F BCR112W EHA07184 BCR112 BCR112F OT323 BCR108W BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23 PDF

    WFs transistor

    Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1


    Original     		BCR112. BCR112 BCR112W EHA07184 OT323 dissipationBCR112, BCR112W, 2011-0components WFs transistor PDF

    SOT-363 fg

    Abstract: WFs transistor
    Contextual Info: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2ki2, R2=47k£2) Tape loading orientation


    OCR Scan     		OT-363 Q62702-C2486 BCR08PN SOT-363 fg WFs transistor PDF

    Contextual Info: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4 PDF

    BCR08PN

    Abstract: VPS05604 IC-101
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 BCR08PN VPS05604 IC-101 PDF

    BCR08PN

    Abstract: VPS05604
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604 PDF

    Q62702-C2486

    Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
    Contextual Info: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation


    Original     		Q62702-C2486 OT-363 Nov-26-1996 transistor digital 47k 22k PNP NPN Marking wfs sot PDF

    VPS05604

    Abstract: WFs transistor
    Contextual Info: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604


    Original     		VPS05604 OT-363 EHA07193 EHA07176 OT-363 Oct-19-1999 VPS05604 WFs transistor PDF

    BCR08PN

    Abstract: BCR108S E6327 VPS05604 marking code w1s
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 BCR08PN BCR108S E6327 VPS05604 marking code w1s PDF

    bcr08pn

    Abstract: WFs transistor wfs marking
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 OT-363 EHA07193 OT363 bcr08pn WFs transistor wfs marking PDF

    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 EHA07193 OT-363 EHA07176 OT363 50cal PDF