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    X-BAND AMPLIFIERS Search Results

    X-BAND AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TA75W01FU
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S67TU
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S54F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S55F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation

    X-BAND AMPLIFIERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Medium Power Amplifiers

    Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input


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    miteq amf

    Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
    Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input


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    WR284* ISOLATOR

    Abstract: MS3116E-10-6S WR340 flange dimensions
    Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS


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    2002/96/EC 2002/96/EC C-39B WR284* ISOLATOR MS3116E-10-6S WR340 flange dimensions PDF

    Contextual Info: 16W / 20W / 25W X-Band Block Up Converter GaN Technology 16W / 20W / 25W GaN-based X-Band BUC SSPBg-210XTM series Designed to meet MIL-STD-188-164A Features •       Up-converts an L-Band input frequency 950 – 1450 MHz to the X-Band frequency of 7.9 – 8.4 GHz


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    SSPBg-210XTM MIL-STD-188-164A SSPBg-210X CPR112 PB-SSPBmg-16W-20W-25W-X-25-13178 PDF

    Contextual Info: 7.2 TO 8.4 GHz SATELLITE I/Q TEST MODULATOR MODULATOR PRODUCTS MODEL: SDM0708LI3CDQ TRI-BAND, X FEATURES • Tri-band, X Downlink . 7.2 to 7.7 GHz Uplink . 7.9 to 8.4 GHz


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    SDM0708LI3CDQ PDF

    TL25XI

    Abstract: HPA cpi CPI twt tube 400 W IESS-308/309 phase noise specification
    Contextual Info: CPI 2.25 and 2.50 kW SuperLinear tm TWT Amplifiers for Satellite Communications X- Band The TL22XI and TL25XI TWTAs X-Band Up to 2.5 kW 1110 W operating TWT Compact High Power Amplifiers, featuring high efficiency, small size and integral computer interface.


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    TL22XI TL25XI HPA cpi CPI twt tube 400 W IESS-308/309 phase noise specification PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK35V4045 MGFK35V4045 PDF

    35W amplifiers

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK35V4045 MGFK35V4045 35W amplifiers PDF

    5.5w

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK37V4045 MGFK37V4045 5.5w PDF

    MGFX39V0717

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFX39V0717 MGFX39V0717 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFX36V0717 MGFX36V0717 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK25V4045 MGFK25V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK30V4045 MGFK30V4045 350mA PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK39V4045 MGFK39V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK39V4045 MGFK39V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK37V4045 MGFK37V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK38A3745 MGFK38A3745 50GHz PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK30V4045 MGFK30V4045 350mA PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK33V4045 MGFK33V4045 700mA PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK25V4045 MGFK25V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK33V4045 MGFK33V4045 700mA PDF

    MGFX36V

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFX36V0717 MGFX36V0717 MGFX36V PDF

    F1375

    Abstract: 9137 006 208 MGFK38A3745
    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


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    MGFK38A3745 MGFK38A3745 50GHz 100ohm F1375 9137 006 208 PDF

    klystron x 13

    Abstract: klystron Klystrons mpp 250
    Contextual Info: cpi[ CPI Microwave Power Products’ MPP klystrons were the first to be used in both commercial and military satellite communications uplinks and are now the worldwide standards for this class of operation covering C-band, X-band and Ku-band frequencies. In 1977, MPP introduced high performance Ka-band amplifiers for earth-satellite


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    fo-50 klystron x 13 klystron Klystrons mpp 250 PDF