X-BEE PRO Search Results
X-BEE PRO Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 10108877-R08203SLF |
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PWR LowProfile® PRO,RAH,20S+8P | |||
| 10108888-R10253SLF |
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PWR LowProfile® PRO,RAR,25S+10P | |||
| 10108877-R10253SLF |
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PWR LowProfile® PRO,RAH,25S+10P | |||
| 10122460-009LF |
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10122460-009LF-PWR LO PRO,RAH,25S+10P | |||
| 10126297-L02153SLF |
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10126297-L02153SLF-PWR LO PRO VTR 2P+15S |
X-BEE PRO Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ^ 0 5 5 1 ^ 0000105 7 • PLXT'52-33‘55' BEE D p L X- TECHNOLOGY CORP M U L T IB U S ! ! PSB 2100 PSB II Reply Only Agent Error Generator Distinctive Features General Description_ _ • Provides complete memory/IO error code generation Including: width |
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PSB2100Contextual Info: BEE D p L X- TECHNOLOGY CORP ^ 0 5 5 1 ^ 0000105 7 • PLXT'52-33‘55' M U L T IB U S ! ! PSB 2100 PSB II Reply Only Agent Error Generator Distinctive Features General Description_ _ • Provides complete memory/IO error code generation Including: width |
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PLXT-52-33 PSB2100 | |
Nippon capacitorsContextual Info: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-696A Z Rev, 1.0 Dec. 27, 1996 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has bee developed as an optimized main memory solution for 4 and 8 Byte processor applications. Th |
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HB56HW164EJN 576-word 64-bit ADE-203-696A HB56HW 164EJN 16-Mbit Nippon capacitors | |
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Contextual Info: MOSEL- VITELIC bEE D MOSEL- VITELIC b3533^1 G0DSS15 IbS IMOVI M S 7200/7201A /7202A 256x9,512x9, 1 K x 9 C M O S F IFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions |
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b3533 G0DSS15 7200/7201A /7202A 256x9 512x9, DIP-600 MS7200L-25PC. | |
ew-60
Abstract: 131vc tms4c1050
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TMS4C1060B 264-WORD SMGS060A-JANUARY1988-REVISED TMS4C1060B-30 TMS4C1060B-40 TMS4C1060B-60 ew598 ew600* ew-60 131vc tms4c1050 | |
SMHS165B-OCTOBERContextual Info: bEE D • TEXAS B1bl7ES INSTR 0GÖG063 =100 A S I C / M E M O R Y ITI I S TMS45165, TMS45165P 2 62 144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES _ SMHS165B-OCTOBER 1992-RE VISED DECEMBER 1992 Organization . . . 262 144 x 16 Single 5-V Supply (±10% Tolerance) |
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TMS45165, TMS45165P 262144-WORD 16-BIT SMHS165B-OCTOBER 1992-REVISED TMS45165/Ps 45165/P-70 45165/P-80 45165/P-10 | |
YM 3533Contextual Info: bEE D MOSEL-VITELIC MOSEL-VITELIC • b3533^1 Q0QS3MS 7Ô3 ■ M O V I V400J8/9 4M X 8, 4M X 9 B IT FA ST PAGE MODE CMOS DYNAMIC RAM M EM ORY MODULE HIGH PERFORMANCE, LO W POWER HIGH PERFORMANCE V400J8/9 PRELIMINARY 70/70L 80/80L 10/10L 70 ns 80 ns 100 ns |
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b3533 V400J8/9 70/70L V400J8/9 80/80L 10/10L V400J8/9L V400J8/9-80 YM 3533 | |
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Contextual Info: MICRON SEMICONDUCTOR INC fc.7E D • b i l l i g □ □ C H 2 ciH bEE ■ PIRN MT5C2565 64K X 4 SRAM l ^ i c n o N SRAM 64K X 4 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-performance, low-power, CM OS double-m etal |
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MT5C2565 28-Pin | |
ti57
Abstract: 4C1070B 4C1070
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1bl725 GflGt15G TMS4C1070B-30 TMS4C1070B-40 TMS4C1070B-60 TMS4C1070B 264-WORD S99Xn» ti57 4C1070B 4C1070 | |
81c4256
Abstract: cpn 2222 81c4256-70 mb8l 81c4256-80 81c4256-70l 20 led VU meter MB81C4251 MB81C4256 MB81C4256-70U-80U-10U-12L
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MB81C4256-70U-80U-10U-12L MB81C4256 144words* 26-lead C1989 C26054S-1C MB81C4256-70L MB81C4256-80L 81c4256 cpn 2222 81c4256-70 mb8l 81c4256-80 81c4256-70l 20 led VU meter MB81C4251 MB81C4256-70U-80U-10U-12L | |
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Contextual Info: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0 |
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CY7C1021V30 | |
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Contextual Info: bEE » MOSEL-VITELIC MOSEL- VITELIC • baSBB^l DDGSOSb 170 ■ MOVI V53C404F HIGH PERFORMANCE, LOW POWER 1 M X 4 BIT FAST PAGE MODE CMOS D YNAMIC RAM H IG H P E R F O R M A N C E V 5 3 C 4 0 4 F Max. RAS Access Time, tRAf. PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L |
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V53C404F 404FL | |
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Contextual Info: CHICAGO MINIATURE LAMP bEE B D EOÖEG4Ö 0DG1432 T?7 M C ML Chicago Miniature Lamp = A N A M E R IC A N M A N IIF A C T IIR F R R e c ta n g u la r F lan g e d LED Lam ps D E S C R I P T I O N A N D These rectangular LED lamps with flanges provide a 2 x 5 mm lighted surface area. Lamps are tinted diffused and |
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0DG1432 300pps) | |
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Contextual Info: hSE 1 □ □ 42b3b m 5T7 « H I T S A D E - 2 0 4 - 0 1 8 A Z HA16117F Series Low Power Supervisor ICs for Microprocessor System H IT A C H I oecR^ HITACHI/ <HCU/t1PU> Preliminary Description Features The HA16117F Series of ICs make a m icro processor (MPU) system fail-safe by monitoring |
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42b3b HA16117F D04Eti50 44TbE04 | |
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BV212A
Abstract: BV416/139
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TDE/G/77D/71 110VDC 415VAC 110VAC 24VDC DSRELWB-0305 BV212A BV416/139 | |
M82C43
Abstract: CD033 IM82C43 IM80C48 IM82C43CPG IM82C43IJG IM82C43IPG JP72 P20-P23 8021 CMOS IC
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IM82C43 IM82C43 IM80C48 24-pin thelM82C43 80c48 M82C43 CD033 IM82C43CPG IM82C43IJG IM82C43IPG JP72 P20-P23 8021 CMOS IC | |
764x1
Abstract: TCL 7621 TL082 opamp TO99-8 ICL76XX icl7106 application note LA 7612 LM324 preamp circuit DIAGRAM rc4558 preamp TL083
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ICL76XX ICL76XX ICL761X/762X/763X/764X 100/iA, 10/nA, lcoob40i ICL7614/15 764x1 TCL 7621 TL082 opamp TO99-8 icl7106 application note LA 7612 LM324 preamp circuit DIAGRAM rc4558 preamp TL083 | |
BC 148 INFO
Abstract: 34AH PM4388
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PM4388 PM4388 PMC-980854R1 960840R4 BC 148 INFO 34AH | |
TR1402A
Abstract: TR1402 SW11339 power transistor mrc 438 ITT Semiconductors cathode ray 7404 not gate ic circuit diagrams LTS 542 10 pin common anode display elexon LJ sharp EL display
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TSX ETY-5103
Abstract: PG-TO247-3 TSX 01 7
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009-134-A O-247 PG-TO247-3 O-247, TSX ETY-5103 TSX 01 7 | |
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Contextual Info: bEE J> m bMS7SSS DQBbDSñ E T E « N E C E N E C ELECTRONI CS INC H.PD17P104 4 - B IT S IN G L E - C H IP M IC R O C O N T R O L L E R The /¿PD17P104 is a tiny microcontroller consisting of a 1 K byte ROM, 16-word RAM , and 16 input/output ports. It is a one-time PROM version of the /¿PD17104, whose internal mask ROM is replaced with a one-time |
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PD17P104 PD17P104 16-word PD17104, PD17P104CS PD17P104GS, PD17104 MD34-* iPD27C256. | |
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Contextual Info: ;8?&&6+%031 0NNK!57;X 8NUDP!<P@MQHQRNP 0>L!&!/]`Tj 10+ O .>L#ba$ + // ! +> , ; 3D@RSPD ) GXi!dXhb_gf\baTdk![\Z[!hb_fTZX!fXV[ab_bZk )!N_fdT!_bi!ZTfX!V[TdZX IA MH-/2 ) IXd\bW\V!ThT_TaV[X!dTfXW )!?jfdX`X!W8*W *W7 dTfXW ) B\Z[!cXT^!VgddXaf!VTcTU\_\fk ) Cafd\ae\V!YTef(dXVbhXdk!UbWk!W\bWX |
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26892F 009-134-A O-247 PG-TO247-3 O-247, | |
7404 signetics
Abstract: GBA ST1 VSBC-2 ibm hardware mca mca ibm
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PLHS501 PLHS501. PLHS501 16-bit 7404 signetics GBA ST1 VSBC-2 ibm hardware mca mca ibm | |
K/ADC-00111Contextual Info: b2E T> m b M 2 7 5 2 S D D 3 b l 3 2 =177 « N E C E N E C ELECTRONICS INC Ì.PD17P107 4-BIT SINGLE-CHIP MICROCONTROLLER The*PD17P107 is a tin y microcontroller composed of a ROM w ith 1K-byte capacity, a RAM w ith 16-word capacity and 11 I/O ports. It is a product developed by replacing the on-chip mask ROM o f the/iPD17107 |
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PD17P107 PD17P107 16-word the/iPD17107 PD17P107CX, PD17P107GS //PD17107. PD17000architecture //PD27C256. K/ADC-00111 | |