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    Y2 TRANSISTOR Search Results

    Y2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    Y2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    xps-CM

    Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
    Contextual Info: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed


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    14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch PDF

    ss8050 sot-323

    Abstract: ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SS8550 SOT-323 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2. Emitter 3. Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    OT-323 SS8550 OT-323 SS8050 ss8050 sot-323 ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2 PDF

    SS8550 sot-23 Y2

    Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 SS8550 OT-23 SS8050 SS8550 sot-23 Y2 ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 SS8550 OT-23 SS8050 -100mA -800mA -800mA, -80mA PDF

    PXT8050

    Abstract: Y2 SOT-89 PXT8550
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    OT-89 PXT8550 OT-89 PXT8050 -100mA -800mA -800mA, -80mA PXT8050 Y2 SOT-89 PXT8550 PDF

    ss8550 sot-23

    Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR
    Contextual Info: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage


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    OT-23 SS8550 OT-23 SS8050 -100A, -100mA -800mA -800mA, -80mA ss8550 sot-23 SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR PDF

    PXT8550

    Abstract: marking Y2 Y2 SOT-89 transistor marking y2
    Contextual Info: PXT8550 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B Features — 2.6 4.25 2.4 3.75 Compliment to PXT8050 0.8 MIN MARKING: Y2 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    PXT8550 OT-89 OT-89 PXT8050 -800mA -800mA, -80mA -10mA PXT8550 marking Y2 Y2 SOT-89 transistor marking y2 PDF

    Y2 SOT-23

    Abstract: SS8550LT1 IC800
    Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    SS8550LT1 OT-23 SS8550LT1 -20Vdc, -80mAdc) -80010V OT-23 Y2 SOT-23 IC800 PDF

    transistor Y2

    Abstract: Y2 TRANSISTOR EHA07478
    Contextual Info: GaAs Components HiRel Discretes and Microwave Semiconductors 11.5 Package Outlines 11.5.1 Package Outlines of Diode Packages 11.5.1.1 FP Package 1.1’ 1.2’ Y1 X1 2 1.1 Y2 1.2 EHA07473 B max. B 3.10 3.55 B1 3.00 3.30 D 1.30 1.70 D1 0.55 0.65 d 0.10 0.15


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    EHA07473 EHA07474 HPAC140 EHA07475 EHA07476 EHA07485 EHA07486 MWP-25 EHA07488 EHA07487 transistor Y2 Y2 TRANSISTOR EHA07478 PDF

    Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6


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    TT4-EA-13066 FL6L52060L UL-94 PDF

    MSC7171

    Abstract: QFP100-P-1420-0
    Contextual Info: E2C0030-27-Y2 ¡ Semiconductor MSC7170-xx ¡ Semiconductor This version:MSC7170-xx Nov. 1997 Previous version: Jul. 1996 5¥7 Dot Character ¥ 16-Digit ¥ 2-Line Display Controller/Driver with Keyscan Function GENERAL DESCRIPTION The MSC7170 is a display controller/segment driver containing a 5 ¥ 6 keyscan circuit, designed


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    E2C0030-27-Y2 MSC7170-xx 16-Digit MSC7170 MSC1164/1165 16-digit MSC7171 QFP100-P-1420-0 PDF

    Contextual Info: E2C0030-27-Y2 O K I Semiconductor M S C 7 1 7 0 -X X Previous version: Jul. 1996 ~ 5x7 Dot Character x 16-Digit x 2-Line Display Controller/Driver with Keyscan Function GENERAL DESCRIPTION The MSC7170 is a display controller/segment driver containing a 5 x 6 keyscan circuit, designed


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    E2C0030-27-Y2 16-Digit MSC7170 MSC1164/1165 MSC7171 MSC7170-xx QFP100-P-1420-0 65-BK PDF

    Contextual Info: E2C0030-27-Y2 O K I Semiconductor Previous version: Jul. 1996 M S C 7 1 7 0 -XX 5x7 Dot Character x 16-Digit x 2-Line Display Controller/Driver with Keyscan Function GENERAL DESCRIPTION The MSC7170 is a display controller/segment driver containing a 5 x 6 keyscan circuit, designed


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    E2C0030-27-Y2 16-Digit MSC7170 MSC1164/1165 MSC7171 PDF

    K110 B3

    Abstract: ICS950822AGLFT capacitor 476 16K 026 3225 k50 varistor panasonic cf-y2 SII Front Main Board version 2.0 transistor C547 equivalent lcd screen LVDS connector 40 pins i-pex 3225 K30 DIODE cd c326
    Contextual Info: ORDER NO. CPD0406022C1 Personal Computer CF-Y2 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-Y2DWAZZ1 2 1: Operation System K: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2004 Matsushita Electric Industrial Co., Ltd. All rights reserved.


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    CPD0406022C1 096Vtyp. 55typ. VREFIN/32 VREFIN/55 VREFIN/100 2xx33x0 K110 B3 ICS950822AGLFT capacitor 476 16K 026 3225 k50 varistor panasonic cf-y2 SII Front Main Board version 2.0 transistor C547 equivalent lcd screen LVDS connector 40 pins i-pex 3225 K30 DIODE cd c326 PDF

    2SB1425

    Contextual Info: h 7 > v 7 í ¡ /Transistors 2SB1425 O C R 44 2 5 i£*V7^7l/-:H&PNPy';a>h7>y2* Epitaxial Planar PNP Silicon Transistor fô J iîlfc ft^ J iiÎlffl/L o w Freq. Power Amp. • • ÿffti \fj£E!]// Dimensions Unit : mm 1) V c E ( s a l ) ^ '" 'i & (' ' o VcE(sat) = - 0 .2 V ( T y p .)


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    2SB1425 100MHz 2SB1425 PDF

    16 seg led

    Abstract: 5 x 7 dot matrix display keyscan pin diagram of 10 dot matrix display 5x7 MSC7170-XX MSC7171 QFP100-P-1420-0 oki 1165 oki 7170
    Contextual Info: E2C0030-27-Y2 O K I Semiconductor P revious version: Jul. 1996 M S C 7 1 7 0 -XX 5x7 Dot Character x 16-Digit x 2-Line Display Controller/Driver with Keyscan Function G ENERAL D ESC R IPTIO N The M SC7170 is a display controller / segment driver containing a 5 x 6 keyscan circuit, designed


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    E2C0030-27-Y2 MSC7170-XX 16-Digit MSC7170 MSC1164/1165 MSC7171 16 seg led 5 x 7 dot matrix display keyscan pin diagram of 10 dot matrix display 5x7 MSC7170-XX QFP100-P-1420-0 oki 1165 oki 7170 PDF

    analogue ohmmeter circuit diagram

    Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
    Contextual Info: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower


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    ZN451E ZN451CJ Ti7057fl analogue ohmmeter circuit diagram transistor tt 2170 em digital ic cd 4066 BUT18 PDF

    Contextual Info: E2C0020-27-Y2 O K I Semiconductor Previous version: Jul. 1996 M S C 1 2 0 9 42- Bit x 2 Duplex Controller/Driver with Digital Dimming Function G E N ER A L D ESCRIPTIO N The MSC1209 is a Bi-CMOS display driver for a 1 / 2-duty vacuum fluorescent display tube. The


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    E2C0020-27-Y2 MSC1209 84-bit 10-bit QFP56-P-910-0 65-2K PDF

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60 PDF

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI PDF

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 PDF

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


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    MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 PDF

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


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    MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI PDF