Y94 5 Search Results

injection moulding machine plc controlled system

Abstract: relay safety telemecanique telemecanique safety relays telemecanique emergency stop relay relays telemecanique xps-mp XPSMP telemecanique hand switch telemecanique telemecanique emergency stop button
Contextual Info: Telemecanique XPS-MP 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions Safety-Controller für zwei

Contextual Info: ESAD25M C,N,D <i5A> ¡ a a g g it » f'f = t - K FAST RECOVERY DIODE • Features >W y # I t A' MUR £ t l f t 7 J l ^ - Y94 Insulated package by fully molding. High voltage by mesa design. ►S S i f S t t High reliability ìé m m C onnection D iagram

Contextual Info: T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:53:00 amp36051 /home/amp36051/edmmod AL L R IG H T S R E S E R V E D . ,19 n 2 LOC AA

Contextual Info: r 4 T H I S DRAWING T 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AL L R IG H T S R E S E R V E D . QUANTITY AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:38:29 amp36051 /home/amp36051/edmmod

MMIC marking code S2

Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
Contextual Info: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match

Contextual Info: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

Contextual Info: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY531000S

Contextual Info: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AA •POSI TI ON #1 REVISED P ER EC 0S1B-0020-01 DD 0 9 J UL 0

Contextual Info: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve

Contextual Info: 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION Y •POSI TI ON #1 REVISED P ER EC 0G22-0025-99 SS 4- 26-99 INDICATOR

HY514260B

Contextual Info: »HYUNDAI HY514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 6 4 3 2 ,1 9 DI ST LOC R ES ER V ED . REVISIONS 47 AD DESCRIPTION REVISED POS I T I ON #1 P ER EC 0S1B-0020-01 DD 09JUL0 I NO I C A T OR

Contextual Info: •HYUNDAI H Y 5 1 4 4 6 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

9552N

Abstract: 8802n 5504L 2N3632 2N44 THB94 XO-72 SD1577 SD1574 CB299
Contextual Info: 130. 230 MHz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S Vcc PACKAGE TYPf C O N F IG . V ^out min (W ) fo Pin (M H z) (W) Gp min (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175 175

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D-0 94V-0

Contextual Info: 7 THIS JÊL DRAWING 15 U N P U B L IS H E D . C O P Y R IG H T RELEASED 19 BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S , 6 4 5 3 2 19 LOO R ES ER V ED . GP R E V I S I ON S DI ST 00 DESCRIPTION D REVISED PER EC 0S1C-0318-00 CF 2SSEP01 2 £ OF

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GER-A

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