YSSS Search Results

MB86686A

Contextual Info: MB86683B Edition 1.0 1. OVERVIEW The NTC is a full duplex device which can be used to provide broadband termination functions in a variety of applications. Its primary use is for terminating the user or network ends of a user-network interface based on ITU-T,

Contextual Info: SKKT 250, SKKH 250 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Thyristor / Diode Modules SKKH 250 SKKT 250 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'%

Contextual Info: Tem ic 29C532E Semiconductors 32-Bit Bus-Watch EDAC Error Detection And Correction unit 1. Description The 29C532E EDAC is a very low power bus-watch 32-bit Error Detection And Correction unit EDAC . EDAC is used in a high integrity system for monitoring

Contextual Info: 8 SCALA NON IMPHGNATIVA COO NOT SCALE? DIMENSION! IN DIMENSIONS IN? m m 18.8 T B O PROIEZIONE EUROPEA (EUROPEAN PROJECTION N O TE ( NOTES 1. MATERIALE(MATL . ?, 8RONZO FOSFOROSOCPHOSPHOR BRONZE). U • 1 = = /'‘ r'-.T 1- 1 L / p f^ „ 2. F I N I T U R A C F I N I S K ) . DORATO 0 .4 / iM N E L L 'A R E A D I CO N TATTO E

lm 3805

Abstract: MD38XX MD3810
Contextual Info: 2/5/10MHz V/F, F/V Converters M O m W O m W W W C W C W K 'V O W KfrX iW K W iW X frJiW CW iW iX :i-X « » X W « » K W « » X W O « O X O ¡vXvXOXWWOXWWWXWWWXWi' ;v X ^ frM frM W » W W W m fr v.vsy.v.vsvs.oyyyy.vyy.'. :ox •:'>:■»:vyvsvy.vs.*:•:

MAA740

Abstract: vf 185 ELD-740-524-6 A740
Contextual Info: LED lamp ELD-740-524-6 Radiation Type Technology Case Infrared ELD-740-524-6 AIGaAs/AIGaAs 5 mm plastic lens Description Applications High-power, high-speed, double heterostructure with removed substrate, with standoff leads Optical communications, safety equipment

74ls82

Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Contextual Info: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all

Contextual Info: ^E D I EDI8F24128C Electronic Design* Inc. High Speed Three Megabit SRAM Module IPiilllllfoMY 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is

EN3690

Abstract: MLC4001B MLC400
Contextual Info: SANYO SE MI CONDUCTOR CORP 53E I> • 7ST?07b 00103S4 50T « T S A J T- 1 3 - 2 - / I Ordering number : EN3690 MLC4001BM CMOS Standard Logic Quad 2-Input NOR Gate Feature« ■2-input NOR logic gate 1C equivalent to B series, 4 2-input NOR gates contained in a single package

sith

Abstract: NDP6060L
Contextual Info: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

2SK508

Abstract: 076z marking K52 Vus-50V
Contextual Info: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0

IL-W-10P-SD

Abstract: LM6Q40 LM6Q40 wiring lm6040 556N LM6Q35 X101
Contextual Info: SHARP / - TECHNICAL LITERATURE MODEL NO, LM6Q40 DOC. NO. LC 98556 DATE J U N ,1 2 ,1 9 9 8 . . * The technical literature is subject to be changed without notice * SHARP COPRATION

Contextual Info: 0 .OPTEK P ro d u c t Bulletin O P B 6 O6 J u n e 1996 Reflective Object Sensors Types OPB6O6A, OPB6O6B, OPB6O6C F ea tu res A b s o lu te M axim um R a tin g s T a = 2 5 ° C u n le s s o th e rw is e noted • Phototransistor output • Unfocused for sensing diffuse surface

CY37192

Abstract: CY37192V cypress ultra37000 jtag
Contextual Info: ww.vi fv«/ kvv' UltraLogic 3.3V 192-Macrocell ISR™ CPLD — ts = 7.0 ns Features — tco = 6.0 ns • 192 macrocells in twelve logic blocks • IEEE standard 3.3V operation 3.3V ISR • • • • • • • • • — 5V tolerant • 3.3V In-System Reprogrammable™ ISR™

Na3 smd

Abstract: ysss VDD-10VDD
Contextual Info: Crystal Clock Oscillators 91SMO +3.0V, +3.3V or +5V FIXED MODELS 91SMO STANDARD SMD CLOCK OSCILLATORS STANDARD SPECIFICATIONS over all conditions Operating Conditions Operating temperature Actual Size Input voltage (VDD) Tri-state control 91SMO 7.0±0.2

Contextual Info: 8 SCALA NON IMPHGNATIVA COO NOT SCALE? DIMENSION! IN DIMENSIONS IN? m m 18.8 TBO PROIEZIONE EUROPEA (EUROPEAN PROJECTION N O TE ( NOTES 1 . MATERIALE(MATL. ?, 8 RONZO FOSFOROSOCPHOSPHOR BRONZE). U • 1 = = /'‘ r'-.T 1- 1 L / p f^ „ 2. F I N I T U R A C F I N I S K ) . DORATO 0 .4 / iM N E L L 'A R E A D I CO N TATTO E

Contextual Info: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are p ro d u c e d using N a tio n a l's p ro p rie ta ry , hig h cell d e n s ity , D M O S te c h n o lo g y .

Contextual Info: August 1 99 6 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

SF-HD62

Abstract: E198681 APC UPS CIRCUIT DIAGRAM e198681 CA-f120 TOLD2000FDA sanyo OPTICAL PICK-UP CA-F120 DVD LENS circuit diagrams SF-HD62FV SF-HD6
Contextual Info: 仕様書番号 ID NUMBER 作成年月日 PREPARATION 14692915 2004.12.27 TENTATIVE OPTICAL DVD PICK-UP 仕 様 書 SPECIFICATIONS MODEL：SF-HD62FV 三 洋 電 機 株 式 会 社 電 子 デ バイ ス カ ン パニ ー 光デバイスビジネスユニット

MSM5416250

Abstract: 11CC11
Contextual Info: OKI Semiconductor MSM5416250 ~ OKI SUPER HIGH SPEED GRAPHICS DRAM Technical Inform ation 262, DESCRIPTION The MSM5416250 is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416250 is especially designed for high performance PC graphics. The MSM5416250 is

DDMM24W7S

Abstract: DBMA25P 3W3 connector d sub DAMA15S DDMAM50P demm5w1s DDMA50S DCM8W8P-NMB-K47 DBMA25S DCM8W8S-NMB-K47
Contextual Info: D*MA Crimp Snap D How to Order — Crimp Connectors contacts are removable Receptacles (Include s So cke t C ontacts) W ith .120’ Through-M ounting H oles ^ Number of Contacts (Shell Size) Standard 9 (El 15(A) DEMA9S DEMAM9S M24308/2-1 DAMA15S DAMAMI5S

476j

Abstract: m62427fp 476J capacitor HP 3D6 Stereo Graphic Equalizer 5.1 channel surround sound IC BSW91 10wll F101 F102
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M62427FP SOUND QUALITY/SOUND FIELD CONTROL DIGITAL SOUND CONTROLLER FOR MINI-COMPONENT STEREO DESCRIPTION The M62427FP is an optimum digital sound controller 1C for home audio. This 1C contains a 5-element graphic equalizer, master volume, sound and karaoke functions voice

Contextual Info: EmbeddedTestController •xoxî 'XW î 'XiM î 'X « C'X». ;v XW •Xi'Xi'XC'Xi'XC'Xi'Xi'. . :vy.vyyyyvyyyyyyy.vyy.<:•: 'YfV.' \’V.' IMtWiWiW'Mi«-;'. . The Micro Networks ETC-8 is an Embed­ ’ .

Contextual Info: g g p -x m d t Integrated Device Technology, Inc. CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS IDT72413 FEATURES: DESCRIPTION: • First-In/First-Out dual-port memory— 45MHz • 64 x 5 organization • Low power consumption — Active: 200mW typical) • FlAM-based Internal structure allows for fast fall-through