Z44 MOSFET Search Results

IRCZ44

Abstract: IRC540 IRC530 IRC640 IRC644 IRC740 IRC840 N6050
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH 3M C Topbi MOSFET b K opnyce C B03M 0M H 0CTbro KOHTpOHfl M 3a^ M Tbl TpaH3MCTopw M O S F E T cepMM IR C n M e ro T flB a flo n o n H M T e n b H H X BbiBOfla, no3Borm ww,mx pea^M 30BHBaTb #yHKU,Mro orpaHMHeHMfl TOKa m K o m p o rm TeM nepaTypw .

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

MRFE6VP8600H

Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Contextual Info: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF6VP3450H

Abstract: ATC800B DVB-T Schematic MRF6Vp3450 A114 JESD22 MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3450HSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2, 9/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

IRFIZ44

Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF6Vp3450

Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

DVB-T Schematic

Abstract: MRF6VP3450HR6 atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2.1, 11/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed

MRF8P29300H

Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed

1990- 2335 optocoupler

Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Contextual Info: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors