ZE TRANSISTOR MARKING Search Results
ZE TRANSISTOR MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
|
||
| TTC5886A |
|
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
|
||
| TTA2097 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
|
||
| TPCP8515 |
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
|
||
| TTC021 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
|
ZE TRANSISTOR MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
transistor c143
Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
|
Original |
DTC143 OT523/SOT323/SOT23 OT-723 S1404021 transistor c143 C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23 | |
marking EB 202 transistor
Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
|
OCR Scan |
2SC4672 OT-89, SC-62) 2SC4672; 2SC4672 marking EB 202 transistor transistor 2SC4672 ZE TRANSISTOR MARKING | |
ze 003 ic
Abstract: marking CODE ZUA SOT23 ZUA SOT23 ZCA TRANSISTOR transistor E21 MARKING ZE SOT-23 ze 003 ZCA transistor sot 23 sot-23 MARKING CODE ZCA 8k sot 23 marking
|
Original |
DTC113 OT-723 OT-523 OT-323 OT-23 O-92S ze 003 ic marking CODE ZUA SOT23 ZUA SOT23 ZCA TRANSISTOR transistor E21 MARKING ZE SOT-23 ze 003 ZCA transistor sot 23 sot-23 MARKING CODE ZCA 8k sot 23 marking | |
ZUA SOT23
Abstract: ZCA TRANSISTOR marking CODE ZUA SOT23 zua marking code sot 23 ZCA transistor sot 23 marking code zua
|
Original |
DTC113 OT-723 OT-523 31TYP O-92S ZUA SOT23 ZCA TRANSISTOR marking CODE ZUA SOT23 zua marking code sot 23 ZCA transistor sot 23 marking code zua | |
ZUA SOT23Contextual Info: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with |
Original |
DTA143 OT-723 OT-523 31TYP O-92S ZUA SOT23 | |
ze 003
Abstract: ZUA SOT23 ZCA TRANSISTOR ze 003 ic transistor E23 ZCA transistor sot 23 ZCA SOT-23 marking CODE ZUA SOT23 sot-23 MARKING CODE ZCA sot 23 zua
|
Original |
DTC143 OT-723 OT-523 OT-323 OT-23 O-92S ze 003 ZUA SOT23 ZCA TRANSISTOR ze 003 ic transistor E23 ZCA transistor sot 23 ZCA SOT-23 marking CODE ZUA SOT23 sot-23 MARKING CODE ZCA sot 23 zua | |
ze 003 ic
Abstract: ze+003+ic ze 003 ZUA SOT23
|
Original |
DTC143 OT-723 OT-523 31TYP O-92S ze 003 ic ze+003+ic ze 003 ZUA SOT23 | |
ZCA TRANSISTOR
Abstract: marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142
|
Original |
DTA143 OT-723 OT-523 OT-323 OT-23 O-92S ZCA TRANSISTOR marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142 | |
marking CODE ZUA SOT23Contextual Info: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin -film resistors with |
Original |
DTC113 OT-523 OT-723 marking CODE ZUA SOT23 | |
ZUA SOT23
Abstract: SOT-723 marking,13 zua marking code sot 23
|
Original |
DTA143 OT-523 OT-723 ZUA SOT23 SOT-723 marking,13 zua marking code sot 23 | |
|
Contextual Info: T O SH IB A R N 4902 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4902 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 1.25 ± 0.1 • ZE- Including Two Devices in US6 (Ultra Super Mini Type with 6 |
OCR Scan |
RN4902 | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1945 FOR GENERAL-PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1945 is a rasin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unitmm designed with high collector current and high voltage. |
OCR Scan |
2SA1945 2SA1945 2SC5211. 150MHztyp 600mA SC-62 | |
|
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications |
Original |
NESG2021M16 NESG2021M16 NESG2021M16-T3 PU10393EJ01V0DS | |
A008
Abstract: MD127 DIAGRAM iris sat DFN10 A008 TRANSISTOR DFN-10 ic a008 11-MD127 11MD127 JESD51-7
|
Original |
11-MD127 SP-MD127-A Tel886-3-5645656 Fax886-3-5645626 MSOP10 DFN10 A008 MD127 DIAGRAM iris sat A008 TRANSISTOR DFN-10 ic a008 11-MD127 11MD127 JESD51-7 | |
|
|
|||
Transistor 4515
Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
|
OCR Scan |
029426A 50B4DIN41867 569-GS 000s154 hal66 Transistor 4515 CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300 | |
2SJ508Contextual Info: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS |
OCR Scan |
2SJ508 -100V) -10ton 10jus VDD--80V, 2SJ508 | |
|
Contextual Info: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L 2-7r-MOS V 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • |
OCR Scan |
2SJ508 -100V) 10/iS | |
|
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz |
Original |
NESG2021M16 NESG2021M16 NESG2021M16-A PU10393EJ03V0DS | |
2SK238Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2SK238 FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Low Feedback Capacitance Crss * 0.07 pF TYP. in m illim eter« •H ig h l y fs I l y fs I * 3.5 ms TYP. ABSOLUTE MAXIMUM RATINGS |
OCR Scan |
2SK238 2SK238 | |
2N5401S SOT-23
Abstract: 2N5401S
|
Original |
2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S SOT-23 2N5401S | |
2SK520
Abstract: k41 transistor transistor k41 transistor k42 marking k42 AM radio K447
|
OCR Scan |
2SK520 2SK520 k41 transistor transistor k41 transistor k42 marking k42 AM radio K447 | |
2N5401SContextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=-50nA Max. @VCB=-120V |
Original |
2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S | |
2N5401SContextual Info: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 H A 3 G : VCBO=-160V, VCEO=-150V ・Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V |
Original |
2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S | |
2SJ508
Abstract: marking ze
|
OCR Scan |
2SJ508 marking ze | |