ZENER DIODE ITT Search Results

sc6202

Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
Contextual Info: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due

2A 5v ZENER DIODE

Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ
Contextual Info: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to

2SC5060

Abstract: 2SC5060 equivalent transistor 2sc5060 2sg50
Contextual Info: 2SC5060 Transistor, NPN, Darlington Features Dimensions Units : mm • • • • • • available in ATV TV 2 package built-in 90 ±10 V Zener diode between collector and base low Zener voltage fluctuation highly resistant to surge damper diode incorporated

in5349b

Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Contextual Info: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C

2SD2010

Contextual Info: 2SD2010 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • built-in 60 V Zener diode between collector and base • resistant to surges • damper diode incorporated j_o • built-in resistors between base and emitter

2SC5576

Contextual Info: 2SC5576 Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

zener diode c 531

Abstract: 20kv diode 6N diode zener diode array IEC1000-4-2 zener diode 531 2.5kV ZENER DIODE
Contextual Info: STZ5.6N Diodes_ Zener Diode Array STZ5.6N •Applications Constant voltage control For the ESD measure of a signal line •External dimensions Units : mm •Features 1) Designed for mounting on small surface areas 2) High reliability

marking lt

Abstract: 2SD2028 IC 2803
Contextual Info: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage

2SD1866

Abstract: 2SD2143 2SD2212 2SD2397 T100
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60+1OV, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"

Contextual Info: ATEI HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) • Optional Zener Diode output (additional protection against inductive

Pulsating

Abstract: 1H5011 2SD412 amplifier 2606 LSE B3 transformer natel engineering 15-V 74LS138 74LS163 HDR2606-14S
Contextual Info: ATEL HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features ¿¿*55 • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) ôri3 006391 tM • Optional Zener Diode output

2SD1701

Abstract: PA33
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1701 The 2SD1701 is NPN silicon epitaxial darlington transistor designed fo r pulse m otor driver, printer driver, solenoid driver. FEATURES • High DC Current gain. • Zener Diode between Collector and Base fo r Absorbing

diode zener c25

Abstract: IGBT FF 300
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

ic 2028

Abstract: 2028b IC 2803
Contextual Info: ¡^Ordering num ber: EN 2803 2SD2028 No.2803 NPN Epitaxial P lana r Silicon T ransistor Low-Frequency Power Amp A pplications F eatures • With Zener diode 11 ± 3V between collector and base •Large cu rren t capacity ■Low collector to em itter satu ra tio n voltage

Contextual Info: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability

Contextual Info: HITACHI 2SD2263-Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92 1 • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Table 1 Absolute M aximum Ratings (Ta = 25°C) Item Symbol Rating

Contextual Info: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Collector to base voltage

Contextual Info: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline T O -2 2 0 A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

Contextual Info: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4422 PU3122 PU4122
Contextual Info: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B

Contextual Info: Panasonic Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low -frequency am plification Unit: mm 4 . 5+ 0.1 • Features • • • • High foward current transfer ratio hpe. 60V zener diode built in between collector and base. Darlington connection.

2SC4674

Contextual Info: 2SD2170 2SC4574 Transistors I Medium Power Transistor Motor or Relay drive 2SD 2170 •F e a tu re s 1) 2) 3) 4) 5) 6) •A b s o lu te maximum ratings (T a = 2 5 ”C ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.