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    ZETE Price and Stock

    Maxim Integrated Products MAX1501ZETE-

    IC BAT CHG MULTCHEM 1-3CL 16TQFN
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    DigiKey MAX1501ZETE- Tube 120 1
    • 1 $8.37
    • 10 $5.617
    • 100 $8.37
    • 1000 $3.6
    • 10000 $3.6
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    Rochester Electronics LLC MAX1501ZETE

    IC BAT CHG MULTCHEM 1-3CL 16TQFN
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    DigiKey MAX1501ZETE Tube 98
    • 1 -
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    • 100 $3.07
    • 1000 $3.07
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    Maxim Integrated Products MAX1501ZETE

    IC BAT CHG MULTCHEM 1-3CL 16TQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAX1501ZETE Tube 2,500
    • 1 -
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    • 1000 -
    • 10000 $2.43362
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    Rochester Electronics MAX1501ZETE 1,087 1
    • 1 $2.95
    • 10 $2.95
    • 100 $2.77
    • 1000 $2.51
    • 10000 $2.51
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    Rochester Electronics LLC MAX8847ZETE-T

    Switching Regulator, 1000kHz Swi
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAX8847ZETE-T Bulk 128
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    • 1000 $2.36
    • 10000 $2.36
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    Rochester Electronics LLC MAX8848ZETE-T

    Switching Regulator, 1000kHz Swi
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAX8848ZETE-T Bulk 128
    • 1 -
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    • 1000 $2.36
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    Find more ZETE price and stock on Findchips.com

    ZETE Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1132 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N1613 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N1711 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N1893 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2060 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2102 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2218 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2218A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2219 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2219A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2221 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2221A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2222 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2222A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2223 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2223A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2270 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2368 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2369 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    2N2369A Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ...

    ZETE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2A04D

    Abstract: ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506
    Text: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC 2A04D ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506

    zetex product

    Abstract: oldham 24 battery charger REGULATOR 7875 HIGH SPEED SWITCHING NPN SOT23 ZVN0545G zetex transistors DUAL NPN SOT23-6 ZR431 equivalent LM4041 ZRC250
    Text: 7875 Zetex brochure repro 14/9/04 14:34 Page 2 APPLICATION FOCUS Power Supply Design SEMICONDUCTORS 7875 Zetex brochure repro 14/9/04 14:34 Page 3 Cut Size, Boost Performance As a power supply designer, you’ll understand the continuous pressure to reduce costs, cut size, improve


    Original     		PDF

    ZXMC6A09DN8

    Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC 60V dual N-Channel trench mosfet 6A09 Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
    Text: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC6A09DN8 ZXMC6A09DN8TA 12lephone: ZXMC6A09DN8 ZXMC6A09DN8TA ZXMC6A09DN8TC 60V dual N-Channel trench mosfet 6A09 Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v

    ZXMP3A16DN8

    Abstract: ZXMP3A16DN8TA ZXMP3A16DN8TC
    Text: ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMP3A16DN8 ZXMP3A16DN8TA ZXMP3A16DN8TC ZXMP3A16DN8 ZXMP3A16DN8TA ZXMP3A16DN8TC

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16

    ZXMHC6A07T8

    Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique


    Original     		PDF ZXMHC6A07T8 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC

    ZXM61N02F

    Abstract: ZXM61N02FTA ZXM61N02FTC
    Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM61N02F ZXM61N02FTA ZXM61N02F ZXM61N02FTA ZXM61N02FTC

    MO-187

    Abstract: ZXMD63P02X ZXMD63P02XTA ZXMD63P02XTC
    Text: ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63P02X ZXMD6300 MO-187 ZXMD63P02X ZXMD63P02XTA ZXMD63P02XTC

    ZXMP3A17DN8

    Abstract: ZXMP3A17DN8TA ZXMP3A17DN8TC
    Text: ZXMP3A17DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMP3A17DN8 ZXMP3A17DN8TA ZXMP3A17DN8TC ZXMP3A17DN8 ZXMP3A17DN8TA ZXMP3A17DN8TC

    ZXM64P035L3

    Abstract: No abstract text available
    Text: ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXM64P035L3 4P035 ZXM64P035L3

    ZXT12P40DX

    Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
    Text: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT12P40DX ZXT12P40DX MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC

    TS16949

    Abstract: ZXMP3F37N8 ZXMP3F37N8TA
    Text: ZXMP3F37N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.025 @ VGS=-10V -10.7 0.041 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for high


    Original     		PDF ZXMP3F37N8 ZXMP3F37N8TA D-81541 TX75248, TS16949 ZXMP3F37N8 ZXMP3F37N8TA

    MO-187

    Abstract: ZXM64P02X ZXM64P02XTA ZXM64P02XTC zxm64p02
    Text: ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.090⍀; ID= -3.5A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM64P02X ZXM64P02XTA ZXM64P02XTC MO-187 ZXM64P02X ZXM64P02XTA ZXM64P02XTC zxm64p02

    TS16949

    Abstract: ZXMP3F36N8 ZXMP3F36N8TA
    Text: ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance.


    Original     		PDF ZXMP3F36N8 ZXMP3F36N8TA D-81541 TX75248, TS16949 ZXMP3F36N8 ZXMP3F36N8TA

    ZXMP7A17K

    Abstract: ZXMP7A17KTC 7A17
    Text: ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.16⍀ ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage


    Original     		PDF ZXMP7A17K ZXMP7A17K ZXMP7A17KTC 7A17

    TS16949

    Abstract: ZXMN6A25N8
    Text: ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID(A) 60 0.050 @ VGS=10V 7.0 0.070 @ VGS=4.5V Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF ZXMN6A25N8 ZXMN6A25N8TA D-81541 TS16949 ZXMN6A25N8

    ZXMN6A09G

    Abstract: TS16949 ZXMN6A09GTA
    Text: ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 7.5 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast


    Original     		PDF ZXMN6A09G OT223 D-81541 ZXMN6A09G TS16949 ZXMN6A09GTA

    ZXMN3A01E6TC

    Abstract: ZXMN3A01E6 ZXMN3A01E6TA
    Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01E6TC ZXMN3A01E6 ZXMN3A01E6TA

    photodiode BPW50

    Abstract: No abstract text available
    Text: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35


    OCR Scan     		PDF 0007DSS ZM100 ZM110 ZM210 BPW41 BPW50 ZPA200 950nm 1K10I 25mmJ photodiode BPW50

    SEC irf630

    Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
    Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630

    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


    OCR Scan     		PDF 7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10

    IRF621

    Abstract: IRF620
    Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF IRF620 IRF621 IRF622 IRF623 O-220

    IRF50

    Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
    Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521

    ZVN0545

    Abstract: ZVN0545A
    Text: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		PDF T17GS7Û ZVN0545A* ZVN0545B ZVN0545L O-220 ZVN0545 ZVN0545A