ZG TRANSISTOR Search Results

K77 transistor

Contextual Info: 7U0 ifr S e / U > 3 s h ^ - k p u - r SHINDENGEN SILICON DARLINGTON TRANSISTOR ARRAY SILICON DIODE ARRAY m m jcT-iiX 'i -y a- *< n m m .m .7 £ $ :zg L L x f c i j ,

200 khz amplifier

Abstract: MA1113-1
Contextual Info: MA1113-1 MA1113-1 For PCS - 20W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1113-1 is a 20W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors,

MA1114-1

Contextual Info: MA1114-1 MA1114-1 For PCS - 30W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors,

VTT9012

Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Contextual Info: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900

nf950

Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
Contextual Info: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,

RETICON ccd

Contextual Info: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli­ cations. This product family provides unparalleled performance

3055 transistor

Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

DCS1800

Abstract: MA1078-2
Contextual Info: MA1078-2 MA1078-2 For DCS1800 - 20W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +24V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1078-2 is a 20W power amplifier designed for DCS 1800, which comprises 4 stages GaAs FET and 2 stages Si bipolar

component of 30w amplifier

Abstract: DCS1800 MA1100-1
Contextual Info: MA1100-1 MA1100-1 For DCS1800 - 30W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1100-1 is a 30W power amplifier designed for DCS 1800, which comprises 4 stages GaAs FET and 2 stages Si bipolar

2N5879

Contextual Info: TYPES 2N5879, 2N5880 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS a -I c-< f- "0 i—m m </> H ro zg C O •u FO R P O W ER -A M P L IFIE R A N D H IG H -SPEED -SW ITCH IN G A P P LIC A T IO N S D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH 2N 5881, 2N5882

SC4105-06 Legend

Abstract: TOM9008
Contextual Info: Available as: VOLTAGE CONTROLLED OSCILLATOR TOM9008, 4 Pin TO-8 T4 TON9008, 4 Pin Surface Mount (SM3) BXO9008, Connectorized Housing (H1) Features • Low Noise Bipolar Transistor ■ Operating Case Temp. -20 ºC to + 60 ºC ■ Environmental Screening Available

transistor zg

Abstract: F689K BF689 zg transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION

RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

RD70HVF1

Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U฀ DK:GH฀;><IF:฀D;฀B:F>H฀/,+฀L฀.X U฀2AHF6฀ADK฀<6H:฀8=6F<: V !0฀8M[^Rh .) O R =L"`_#%^Rh )',.)  *2 _< Q X%dia U฀"LHF:B:฀9J 9H฀F6H:9 U฀%><=฀E:6@฀8IFF:CH฀86E67>A>HM

transistor marking zg

Abstract: marking z0 sot -6
Contextual Info: Y BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli­

RD15HVF1-101

Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF

RD15HVF1

Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica

transistor marking zg

Abstract: sot-23 Transistor MARKING CODE ZG
Contextual Info: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

RD02MVS1

Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

sot-23 Transistor MARKING CODE ZG

Abstract: ZG SOT23 transistor marking zg
Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

RD02MUS1

Abstract: T112 transistor marking zg RD02MVS1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.