2N5882 Search Results

2N5881

Abstract: 2N5882 2N5879 2N5880
Contextual Info: Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications

Contextual Info: MOTOROLA Order this document by 2N5882/D SEMICONDUCTOR TECHNICAL DATA 2N 58 82 Silicon NPN H igh-Pow er Transistor Motorola Preferred Device . . . d e sig ned for g e n e ra l-p u rp o s e po w e r a m p lifie r and sw itch ing applications. • 15 AMPERE

Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N5881

Abstract: 2N5882 2NS882
Contextual Info: tz.li S O L I T R O N D E V I C E S INC DE 1fl3t,flbDa 0 0 0 1 3 S 1 5 1 ~ 2N5881 2N5882 8368602 SOLITRON D EVICES t' « INC . v * UPU SILICON POWER TRANSISTORS HIGH POWER 15 AMPERES FEATURES: EPI-BA SE CONSTRUCTION F A S T SWITCHING HIGH R E L IA B IL IT Y

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2n5882 motorola

Abstract: 2NS882
Contextual Info: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —

Jan2N3055

Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100

1501-33

Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
Contextual Info: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001

2N5882

Abstract: 1N5825 MSD6100 2N5882-D
Contextual Info: ON Semiconductort Silicon NPN High-Power Transistor 2N5882 ON Semiconductor Preferred Device . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — • • • 15 AMPERE SILICON POWER TRANSISTOR

2N5880

Abstract: 2N5882 2N5879 2N5881 Scans-00155740
Contextual Info: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: NPN 2N5881 2N5882 PNP 2N5879 2N5880 _ Boca Semiconductor Corp. BSC http ://www.bocasemi.com * Low Collector-Emitter Saturation Voltage v c e | s a t = 1-0V Max.)@lc=7.0A

Contextual Info: 2N5882 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)150

2N5882

Abstract: 2N5881 2N5879 2N5880
Contextual Info: SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications

Contextual Info: MOTOROLA Order this document by 2N5882/D SEMICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —

2N5879

Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
Contextual Info: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —

terminals of 2n3055

Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

NPN power transistor 15A amperes

Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS
Contextual Info: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A

2N5880

Abstract: 2N5882 2N5879 2N5881 S200 TRANSISTOR TC 100
Contextual Info: 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5879, 2N5881 2N5880, 2N5882

2N5879

Abstract: 2N5880 2N5881 2N5882
Contextual Info: SavantIC Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications

2N5879

Abstract: 2N5880 2N5882 2N5881
Contextual Info: Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications

2N5881

Abstract: 2N5882 2N5879 2N5880
Contextual Info: Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications

MJE34 equivalent

Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881

Contextual Info: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3

2N5879

Contextual Info: TYPES 2N5879, 2N5880 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS a -I c-< f- "0 i—m m </> H ro zg C O •u FO R P O W ER -A M P L IFIE R A N D H IG H -SPEED -SW ITCH IN G A P P LIC A T IO N S D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH 2N 5881, 2N5882

2N5881

Abstract: 2n5882
Contextual Info: TYPES 2N5881, 2N5882 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 160 Watts at 2 5 °C Case Temperature • 15-A Rated Continuous Collector Current • Min f r of 4 MHz at 10 V , 1 A • 90-mJ Reverse Energy Rating TYPES 2N5881, 2N5882 BULLETIN NO. DL-S 7111625, DECEMBER