000370B Search Results

Contextual Info: INTEGRATED DEVICE 14E D 4525771 000370b L> BiCMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 4Kx 9-BIT ADVANCE INFORMATION IDT 72B04 T-Y6-3S FEATURES: DESCRIPTION: • • • • • • • • • • • • • • The IDT72B04 Is a dual-port memorythatutilizesaspeclalFlrstIn/First-Out algorithm that loads and empties data on a first-ln/flretout basis. The device uses Full and Empty flags to prevent data

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

74hc273

Abstract: vhc273
Contextual Info: ß National Semiconductor 74VHC273 Octal D Flip-Flop General Description The VHC273 is an advanced high speed CMOS Octal D-type flip-flop fabricated with silicon gate CMOS technolo­ gy. It achieves the high speed operation similar to equiva­ lent Bipolar Schottky TTL while maintaining the CMOS low

12v to 220v inverter 300w schematic diagram

Abstract: IN4007 silicon diode data sheet 220v 300w ac regulator circuit ELECTRONIC BALLAST 300W circuit diagram irf840 pwm ac sine inverter transformer 220V to 12V 500mA Y2W zener 12v dc 220v ac inverter circuit schematic diagram zener diode y2w BALLAST 300W circuit diagram
Contextual Info: U N Doc # ; 1 5 6 2 L fíiF m iT Y M I C R O t L E C T K O N I C S T he I n f i n i t e P o w e r I o f N N O S e c o n d - G e n e r a t i o n P o w e r Fa c t o r C o n t r o l l e r V A T I O N P D r o d u c t i o n DESCRIPTION The LX1562 is a second-generation

BF 414

Abstract: to92d bc 640 ce bc 630
Contextual Info: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0

EPM7032

Contextual Info: EPM7032 EPLD M . 32-Macrocell Programmable Logic Device September 1993, ver. 3 Features Data Sheet □ □ □ □ □ □ □ □ High-performance, erasable CMOS EPLD based on second-generation MAX architecture 600 usable gates Combinatorial speeds with t PD = 7.5 ns

Contextual Info: LINEAR INTEGRATED CIRCUITS 30-Lead DIP, See Diag. 536 NTE1800 TV Multiplex Sound Decoder, Vcc = 12VTyp G ND L im ite r A m p Input Filte r C ap n Filte r C ap 3 S AP Lam p B S te re o Lam p Q P hase C o m p C a p Q P hase C o m p C ap P hase C o m p Input

Contextual Info: GM7 1 C4 1 0 0 B/BL G oldStar 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4100B/BL is the new generation dy­ nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100B/BL has realized higher density, higher performance and various functions by

3015 hj

Abstract: SK 1117
Contextual Info: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n

bq4025

Abstract: bq4025Y 137001
Contextual Info: bq4025/bq4025Y t j BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 2 6 2 ,1 4 4 w o rd s b y 16 b its . T h e integral control circuitry and lithium

STM-1 Physical interface PHY

Abstract: TCA240 341fh rca 645 PM4341A PM6341 PM7344 PM7345 PUB54016 E1 HDB3
Contextual Info: PMC-Sierra, Inc. • " ISSUE 5 PM7344 S/UNI-MPH SATURN QUAD T1/E1 MULTI-PHY USER NETWORK INTERFACE FEA TU RES • Single chip quad ATM User Network Interface operating at 1.544 Mbit/s or 2.048 Mbit/s. • Implements the ATM Forum User Network Interface Specification V3.1 for DS1

Contextual Info: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il

V53C664H

Abstract: mosel MT
Contextual Info: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

MQ02

Abstract: cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller CL-GD610 crt controller 6845 gd510 cga to vga circuits
Contextual Info: CIRRUS LOGIC INC blE D 213bb3T 000377b 202 « C I R CL-GD610/620-C D ata Sheet 'CIRRUS LOGIC ' ' ' ' p 3 2 ' 3 3 - ' JJ 5 FEATURES • Supports dual-scan and slngle-scan LCD panels ■ Supports gas plasma and EL panels Flat Panel/CRT Enhanced VGA Controller

0520K

Abstract: ecg1027 3243J G1027
Contextual Info: P H IL IP S E C G INC 17E tjk53c]2fl 0G037Ö2 E C G 1027 AUDIO POWER AMPLIFIER MODULE semiconductors FO R 13 W ATTS TYP. A F POWER A M PLIFIER 1 POW ER SUPPLY EQUIVALENT C IR C U IT ► 7 ,2 * 3.24 . 3j j O i 1 *4 0.S 3.0 *I H f.2 0 vii. ,_j dim ensions

mhs 80C32

Abstract: 80C32-N 80C52-N MHS80C32 MHS 80c52 80c52p
Contextual Info: DATA SHEET 8 0 C 3 2 u /8 0 C 5 2 u HIGH SPEED 0 TO 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C32|i/80C52ji-30 : 80C32^/80C52|i-36 : 80C32|i/80C52|i-40 : 80C32ji/80C52n-42: 80C32(i : ROMLESS VERSION OF THE 80C52|i 80C32|j/80C52|i-L : LOW POWER VERSION 2.7 V < Vcc < 5.5 V ; 0 < Fhz < 16 MHz

1N474BA

Abstract: 1N474B 1N472SA IN4730A 1N47S6A 1N472B 1N47S9A
Contextual Info: áS 1N4728A thru 1N4764A PLASTIC Microsemi Corp. ? The diocle e*pens SCOTTSDALE, A 2 • ■ ¡» i For mûre information call: / 6 0 2 9 4 1 -6 3 0 0 FEATURES SILICON 1 WATT ZEN ER DIODES • 3.3 THRU 100 VOLT VOLTAGE RANGE • HIGH S0RGE C0RFENT RATING

FLT-U2

Abstract: GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS lowpass filter 20khz 1590P
Contextual Info: 9 D A T E L FLT-U2 INNOVATION a n d EXCELLENCE Universal Active Filter FEATURES • • • • • State variable filter Output to 200kHz 2-Pole response LP, BP or HP functions Q range from 0.1 to 1,000 Resonant frequency accuracy ±5% Frequency stability ±0.01 %/°C