1000 V N-CHANNEL MOSFET Search Results

1000 V N-CHANNEL MOSFET Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK2R4A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

1000 V N-CHANNEL MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested	Original	SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested	Original	SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested	Original	SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
13n10 Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS	OCR Scan	IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10	PDF
P5NK100Z Abstract: W5Nk100 w5nk100z F5NK100Z STP5NK100Z L 10850 STF5NK100Z STW5NK100Z 10850 Contextual Info: STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type VDSS @TJMAX RDS(on)max ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A	Original	STP5NK100Z, STF5NK100Z STW5NK100Z O-220, O-220FP, O-247 STP5NK100Z O-220FP P5NK100Z W5Nk100 w5nk100z F5NK100Z STP5NK100Z L 10850 STF5NK100Z STW5NK100Z 10850	PDF
W5NK100Z Contextual Info: STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type VDSS @TJMAX RDS(on)max ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A	Original	STP5NK100Z, STF5NK100Z STW5NK100Z O-220, O-220FP, O-247 STP5NK100Z O-220FP W5NK100Z	PDF
5n100 Abstract: 5N100A Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	N100A O-247 O-204 O-204 O-247 4bflb52b 5n100 5N100A	PDF
STP5NB100 Abstract: STP5NB100FP Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100 STP5NB100FP	PDF
STP5NB100 Abstract: STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100 STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET	PDF
ixth12n100 Abstract: 12n100 3055P Contextual Info: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000	OCR Scan	10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P	PDF
STP5NB100FP Abstract: STP5NB100 Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100FP STP5NB100	PDF
Contextual Info: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	5N100 5N100A O-204 O-247	PDF
PLUS264 Abstract: 30n100 IXTN 85 N 20 "SOT-227 B" dimensions Contextual Info: Power MOSFETs with IXTB 30N100L IXTN 30N100L Extended FBSOA VDSS = 1000 V ID25 = 30 A RDS on ≤ 0.45 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings IXTB IXTN PLUS264 (IXTB) V DSS TJ = 25°C to 150°C 1000 1000 V VDGR	Original	30N100L PLUS264 PLUS264 30n100 IXTN 85 N 20 "SOT-227 B" dimensions	PDF
78737 Contextual Info: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss	OCR Scan	IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737	PDF

Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25	OCR Scan	IXTA2N100 IXTP2N100 Cto150 O-263 O-22QAB 1999IXYS C2-76 C2-77	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM	Original	01N100 100mA O-251 728B1	PDF
STD2NK100Z Contextual Info: STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID PTOT STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STU2NK100Z	Original	STD2NK100Z STP2NK100Z STU2NK100Z O-220, STP2NK100Z O-220 STD2NK100Z	PDF
Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V	Original	1N100 O-263 O-220AB	PDF
2NK10 Abstract: STU2NK100Z 2NK100Z STD2NK100Z STP2NK100Z JESD97 Contextual Info: STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID PTOT STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W < 8.5 Ω	Original	STD2NK100Z STP2NK100Z STU2NK100Z O-220, STP2NK100Z O-220 2NK10 STU2NK100Z 2NK100Z STD2NK100Z JESD97	PDF
1N100 Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	1N100 O-263 O-220AB 1N100	PDF
IXYS DS 145 Abstract: 13N100 Contextual Info: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145	PDF
IXTH5N100A Abstract: gs 1117 ax Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000	OCR Scan	5N100 5N100A to150 O-247 O-204 O-204 O-247 IXTH5N100 IXTM5N100 IXTH5N100A gs 1117 ax	PDF
2N100 Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100 Contextual Info: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100	PDF
Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	1N100 O-263 O-220AB	PDF

1000 V N-CHANNEL MOSFET Search Results

1000 V N-CHANNEL MOSFET Result Highlights (5)

1000 V N-CHANNEL MOSFET Datasheets Context Search

13n10

P5NK100Z

W5NK100Z

5n100

STP5NB100

STP5NB100

ixth12n100

STP5NB100FP

PLUS264

78737

STD2NK100Z

2NK10

1N100

IXYS DS 145

IXTH5N100A

2N100