2N100 Search Results

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

Contextual Info: 2N1008A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain. h(FE) Max. Current gain.

2N1000

Contextual Info: 2N1000 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: Advanced Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC90 VCE SAT 1.5 A

BH 3540

Contextual Info: □ IXYS IX S P2N 100 IXSP2N 100A Advanced Technical Information v CES High Voltage IGBT 2N100 1000 V IXSP 2N100A 1000 V Sym bol T est C o n d itio n s v CES Tj = CGR Tj = 25°C to 150°C; l^E= 1 M ß 1000 V ±20 V GEM ±30 V Tc 25°C ^C90 Tc = 25 °C, 1 ms

Contextual Info: 2N1003 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N100 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)25m Maximum Operating Temp (øC)50õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)4.5 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1004 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.

2n1009

Contextual Info: 2N1009 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35ã V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.

40N60A

Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A

Contextual Info: Advance Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

IXGP2N100

Abstract: IXGP2N100A 2N100 IXYS 2N100A
Contextual Info: High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C

2N100

Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
Contextual Info: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

Contextual Info: VCES High Voltage IGBT IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms

Contextual Info: 2N1005 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)5.0 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1006 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)5.0 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)10m

V/2N1008

Contextual Info: 2N1008 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N95A

Abstract: 2N95 2N100 IXTM2N100 IXTM2N95 IXTP2N100 IXTP2N95
Contextual Info: 1ÖE D I X Y S CORP • 4böb22b QOOGLOS T ■ IXTP2N95, 2N100, IXTM2N95, 2N100 □ IX Y S 2 A M PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous

Contextual Info: ATTENUATORS Type N, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XN100W-XX, XN100W-XXF & XN100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. DC - 1.5 GHz ±0.50 dB

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible