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Kyocera AVX Components 100B8R2JW500XT1K CAP CER 8.2PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B8R2JW500XT1K	Cut Tape	4,355		1	1 $5.48 10 $3.711 100 $2.769 1000 $2.769 10000 $2.769	Buy Now
	100B8R2JW500XT1K	Digi-Reel	4,355		1	1 $5.48 10 $3.711 100 $2.769 1000 $2.769 10000 $2.769	Buy Now
	100B8R2JW500XT1K	Reel	1,500		500	1 - 10 - 100 - 1000 $2.00658 10000 $2.00658	Buy Now
Avnet Americas	100B8R2JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2JW500XT1K		221			1 $4.75 10 $3.64 100 $2.72 1000 $2.09 10000 $2.09	Buy Now
Richardson RFPD	100B8R2JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B8R2JW500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2JW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B8R2JW500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2JW500XTV					1 - 10 - 100 - 1000 $3.19 10000 $3.19	Get Quote
TTI	100B8R2JW500XTV	Reel			500	1 - 10 - 100 - 1000 $3.08 10000 $3.08	Buy Now
Kyocera AVX Components 100B8R2JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B8R2JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2JW500XT					1 - 10 - 100 - 1000 $2.96 10000 $2.96	Get Quote
TTI	100B8R2JW500XT	Reel			500	1 - 10 - 100 - 1000 $2.96 10000 $2.96	Buy Now
Richardson RFPD	100B8R2JW500XT				500	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B8R2JWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2JWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B8R2JWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B8R2JWN500XT					1 - 10 - 100 - 1000 $3.59 10000 $3.59	Get Quote
Kyocera AVX Components 100B8R2JW500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B8R2JW500XC100					1 $5.13 10 $4.42 100 $3.3 1000 $2.67 10000 $2.61	Get Quote
Richardson RFPD	100B8R2JW500XC100				200	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now

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100B8R2JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B8R2JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111		Original	PDF
100B8R2JW500XT1K		American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111		Original	PDF

100B8R2JW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
J161 mosfet transistor Abstract: MOSFET J161 100B6R8JW Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW
agere c8 c1 Abstract: 100b8r2jw 100B6R8JW Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW
AGR21045EF Abstract: AGR21045XF JESD22-C101A Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A
AGR21030EF Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557
J964 Abstract: AGR21045EF AGR21045XF JESD22-C101A Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)
J299 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299
AGR21090E Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F
TB185 Abstract: No abstract text available Text: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W	Original	PDF	TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X

AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
AGR21030EF Abstract: AGR21030XF JESD22-C101A J622 Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030EF AGR21030EF DS04-225RFPP DS04-200RFPP) AGR21030XF JESD22-C101A J622
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A
J605 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605
RF POWER MOSFET Abstract: J605 amphenol 24- 28 pf Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030EF RF POWER MOSFET J605 amphenol 24- 28 pf
J964 Abstract: No abstract text available Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF J964
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS02-276RFPP
2.4 ghz mosfet Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-C101A Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent Text: Preliminary Data Sheet November 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-037RFPP DS02-380RFPP) AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent

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100B8R2JW Price and Stock

Kyocera AVX Components 100B8R2JW500XT1K

Kyocera AVX Components 100B8R2JW500XTV

Kyocera AVX Components 100B8R2JW500XT

Kyocera AVX Components 100B8R2JWN500XT

Kyocera AVX Components 100B8R2JW500XC100

100B8R2JW Datasheets (2)

100B8R2JW Datasheets Context Search

J593

J161 mosfet transistor

agere c8 c1

AGR21045EF

AGR21030EF

"RF Power Transistor"

J964

Untitled

Untitled

J299

AGR21090E

AGR21045E

transistor equivalent table 557

TB185

AGR21045E

AGR21030EF

AGR18030EF

J605

RF POWER MOSFET

J964

Untitled

2.4 ghz mosfet

AGR21030E

AGR21045E