64172
Abstract: No abstract text available
Text: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs -Reduced noise 35 Vss/Vcc pins
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IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
104ns
outp57
54H8530
000511b
64172
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Untitled
Abstract: No abstract text available
Text: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation
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IBM11D1365E
IBM11D2365E
72-Pin
1104ns
124ns|
Q0D37
DD0373Ô
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PDF
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1-601805-1
Abstract: 604336-1 1-601806-1 1-604152-1 604161-1
Text: ëm ? • FLEXI-BLOCK Terminal Block System Product Facts ■ Durable, tough nylon on flexible back — bends without breaking ■ Interchangeable with all standard terminal blocks ■ Two basic parts replace dozens of sizes to solve inventory problem s ■ Size # 6 and size # 8
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E60677
1-601805-1
604336-1
1-601806-1
1-604152-1
604161-1
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 0 1 1 6 4 B 0 IB M 0 1 1 6 4 D 0 4M x 4 Stacked DRAM Features • 4 ,194,304 word by 4 bit organization by 2 High • Package: • 4 ,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck - Active (max) - 85m A/75m A - Standby (TTL Inputs) - 2.0m A (max)
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400milx825mil)
IBM01164B0
IBM01164D0
00034D3
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11S2325HP IBM11S4325HP IBM11S2325HM IBM11S4325HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -6R -70 I rAC RAS A ccess T im e ; 60ns j 60ns 70ns fcAC CAS Access Tim e i 15ns [ 17ns 20ns AA Access Tim e From Address
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IBM11S2325HP
IBM11S4325HP
IBM11S2325HM
IBM11S4325HM
72-Pin
104ns
124ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to
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IBM2520L8767
102Mb/s.
400Mb/s
chapt07
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PDF
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M8730HB 8M x 72 DRAM MODULE Features 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc pins) - Buffered PDs 8Mx72 Fast Page Mode DIMM Performance: Fast Page Mode, Read-Modify-Write Cycles
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IBM11M8730HB
8Mx72
110ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM043610ULAA IBM041810ULAA Prelim inary 32K X 36 & 64K X 18 SRAM Features • Asynchronous Output Enable and Power Down Inputs • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow Thru Mode Of Operation with Self-Timed Late Write
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IBM043610ULAA
IBM041810ULAA
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 ;tRAC i RAS Access Time 60ns 70ns ;tcAC 1CAS Access Time 20ns
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1Mx64
104ns
124ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance: • System Performance Benefits:
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IBM11T2640HP
110ns
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 2 3 2 5 H 2M x 32 DRAM Module Features Thin outline .104” Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & CMOS compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, and Hidden
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72-Pin
104ns
124ns
0QD213M
1D2325H
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11N4735BB IBM11N4645BB IBM11N4735CB IBM11N4645CB 4M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: • System Performance Benefits:
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IBM11N4735BB
IBM11N4645BB
IBM11N4735CB
IBM11N4645CB
4Mx64,
4Mx72
104ns
124ns
50H8036
SA14-4623-02
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PDF
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aui isolation transformer
Abstract: TCI D2S f stmicroelectronics "serial eeprom" 93C46 AD-29 PC99 PQFP128 TCI D2S ad1035
Text: STE10/100A PCI 10/100 ETHERNET CONTROLLER WITH INTEGRATED PHY 3.3V PRODUCT PREVIEW 1.0 DESCRIPTION The STE10/100 is a high performance PCI Fast Ethernet controller with integrated physical layer interface for 10BASE-T and 100BASE-TX application. It was designed with advanced CMOS technology to
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STE10/100A
STE10/100
10BASE-T
100BASE-TX
32-bit
IEEE802
aui isolation transformer
TCI D2S f
stmicroelectronics "serial eeprom"
93C46
AD-29
PC99
PQFP128
TCI D2S
ad1035
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PDF
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TCI D2S
Abstract: bra1015
Text: STE10/100A PCI 10/100 ETHERNET CONTROLLER WITH INTEGRATED PHY 3.3V PRODUCT PREVIEW 1.0 DESCRIPTION The STE10/100 is a high performance PCI Fast Ethernet controller with integrated physical layer interface for 10BASE-T and 100BASE-TX application. It was designed with advanced CMOS technology to
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STE10/100A
STE10/100
10BASE-T
100BASE-TX
32-bit
IEEE802
TCI D2S
bra1015
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity, or ECC appli cations • System Performance Benefits: • 2Mx64, 2Mx72 Extended Data Out Page Mode
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2Mx64,
2Mx72
104ns
104ns
124ns
50H7623
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8M x 8 12/11 EDO ORAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 tRAC RAS Access Time 50ns 60ns tCAC CAS Access Time 13ns 15ns • Extended Data Out Hyper Page Mode
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IBM0165805B
IBM0165805P
104ns
472mW
155ma
135ma
130ma
27H6251
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11D4360B IBM11E4360B IBM11D8360B IBM11E8360B 4M/8M x 36 DRAM Module Features High Performance CMOS process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR and Hidden
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IBM11D4360B
IBM11E4360B
IBM11D8360B
IBM11E8360B
72-Pin
110ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 0 1 1 6 1 6 0 IB M 0 1 1 6 1 6 0 B IB M 0 1 1 6 1 6 0 M IB M 0 1 1 6 1 6 0 P 1 M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles
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200nA
350jis
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PDF
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crimping microD
Abstract: No abstract text available
Text: 1.27mm .050" Pitch Commercial Micro-D FEATURES AND SPECIFICATIONS Electrical Features and Benefits • Economical solution for commercial applications requiring Current: 3.0A the density of a microminiature connector Contact Resistance: 8m£2 max. ■ "Crimp and poke" configuration designed for hand or semi
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E81982
100BLC
UL94V-0
crimping microD
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M2730H IBM11M2730HB 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Au contacts Optimized for ECC applications • 2Mx72 Fast Page Mode DIMM System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc P>ns)
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IBM11M2730H
IBM11M2730HB
2Mx72
110ns
130ns
000457b
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address
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IBM11D1360Q
IBM11E1360Q
IBM11D2360Q
IBM11E2360Q
72-Pin
110ns
130ns
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PDF
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100DG
Abstract: 100DJ 100AB 100AC 100BA 100BB 100BC 100CA 100CB 100CC
Text: OA K / n C COY ELEK-. OV E N A I M5E D b75ô510 DQ00374 13T • OKPI -5 V JC C O Y TCXO's 100 Series, .2 to 25 MHz, TTL or HCMOS |K*: ' f The 100 sériés is designed for.+5VDC, TTL3 r or HCMOS applications requiring a space „ if,saving enclosure and- moderate s ta b ilitie s ^
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DQ00374
54jntt
100DG
100DJ
100AB
100AC
100BA
100BB
100BC
100CA
100CB
100CC
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PDF
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Untitled
Abstract: No abstract text available
Text: SED1651 SED1651 LOW-POWER 100-BIT LCD COMMON DRIVER • DESCRIPTION The SED1651 is a 100-output dot matrix LCD common row driver for driving high-capacity LCD panels at duty cycles higher than 1/64 (up to 1/300). The LSI has a wide range of the LCD driving voltages,
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SED1651
100-BIT
SED1651
100-output
SED1648
80-output
SED1640
80bit
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PDF
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